IRFI4227 Todos los transistores

 

IRFI4227 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI4227

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 18 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 26 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 73 nC

Resistencia drenaje-fuente RDS(on): 0.022 Ohm

Empaquetado / Estuche: TO220FP

Búsqueda de reemplazo de MOSFET IRFI4227

 

IRFI4227 Datasheet (PDF)

1.1. irfi4227pbf.pdf Size:290K _international_rectifier

IRFI4227
IRFI4227

PD - 97036B IRFI4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 47 A and Pass Switch Applications

1.2. irfi4227.pdf Size:200K _inchange_semiconductor

IRFI4227
IRFI4227

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4227 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T

 3.1. irfi4229pbf.pdf Size:245K _international_rectifier

IRFI4227
IRFI4227

PD - 97201B IRFI4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 250 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 300 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 32 A and Pass Switch Applications

3.2. irfi4228pbf.pdf Size:302K _international_rectifier

IRFI4227
IRFI4227

PD - 97228 IRFI4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m: 12.2 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 61 A and Pass Switch Applicatio

 3.3. irfi4228.pdf Size:200K _inchange_semiconductor

IRFI4227
IRFI4227

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4228 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T

3.4. irfi4229.pdf Size:201K _inchange_semiconductor

IRFI4227
IRFI4227

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4229 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T

Otros transistores... IRFH8334 , IRFH8337 , IRFHM830 , IRFHM830D , IRFHM831 , IRFHS8242 , IRFHS8342 , IRFI4110G , BUK455-200A , IRFI4229 , IRFI4321 , IRFI4410Z , IRFI4410ZG , IRFIB41N15D , IRFIZ48V , IRFL014N , IRFL024Z .

 

 
Back to Top

 


IRFI4227
  IRFI4227
  IRFI4227
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: GSM2306AE | GSM2306A | GSM2304S | GSM2304AS | GSM2304A | GSM2304 | GSM2303A | GSM2303 | GSM2302S | GSM2302AS | GSM2301S | GSM2301AS | GSM2301A | GSM2301 | GSM2014 |

 

 

 
Back to Top