IRFP4110 Todos los transistores

 

IRFP4110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP4110

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 370 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 180 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 150 nC

Resistencia drenaje-fuente RDS(on): 0.0045 Ohm

Empaquetado / Estuche: TO247AC

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IRFP4110 Datasheet (PDF)

1.1. irfp4110pbf.pdf Size:288K _upd-mosfet

IRFP4110
IRFP4110

PD - 97311 IRFP4110PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m: l Hard Switched and High Frequency Circuits max. 4.5m: ID (Silicon Limited) 180A c ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l

4.1. irfp4127pbf.pdf Size:511K _upd-mosfet

IRFP4110
IRFP4110

IRFP4127PbF HEXFET® Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS D VDSS 200V  Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m  Hard Switched and High Frequency Circuits G 21m max S ID 75A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Chara

4.2. irfp4137pbf.pdf Size:380K _upd-mosfet

IRFP4110
IRFP4110

IRFP4137PbF HEXFET® Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS D VDSS 300V  Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m  Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Chara

Otros transistores... IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 , IRFP3703 , IRFP4004 , IRF540N , IRFP4227 , IRFP4229 , IRFP4232 , IRFP4242 , IRFP4310Z , IRFP4321 , IRFP4332 , IRFP4368 .

 

 
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