IRFP4227 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP4227

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 330 W

Voltaje máximo drenador - fuente |Vds|: 200 V

Voltaje máximo fuente - puerta |Vgs|: 30 V

Corriente continua de drenaje |Id|: 65 A

Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V

Carga de la puerta (Qg): 70 nC

Tiempo de subida (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 460 pF

Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm

Paquete / Cubierta: TO247AC

Búsqueda de reemplazo de MOSFET IRFP4227

IRFP4227 Datasheet (PDF)

..1. Size:296K international rectifier
irfp4227pbf.pdf

PD - 97070AIRFP4227PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch Applications

..2. Size:296K infineon
irfp4227pbf.pdf

..3. Size:212K inchange semiconductor
irfp4227pbf.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP4227PBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

..4. Size:242K inchange semiconductor
irfp4227.pdf

isc N-Channel MOSFET Transistor IRFP4227IIRFP4227FEATURESStatic drain-source on-resistance:RDS(on)21mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Repetitive Peak Current Capability for Reliable OperationShort fall & Rise Times For Fast SwitchingABSOLUTE MAXIM

7.1. Size:300K international rectifier
irfp4228pbf.pdf

PD - 97229AIRFP4228PbFPDP SWITCHFeaturesl Advanced Process Technology Key Parametersl Key Parameters Optimized for PDP VDS min150 V Sustain, Energy Recovery and PassVDS (Avalanche) typ.180 V Switch ApplicationsRDS(ON) typ. @ 10V m12l Low EPULSE Rating to Reduce PowerIRP max @ TC= 100C170 A Dissipation in PDP Sustain, EnergyTJ max175 C Recovery and Pass

7.2. Size:301K international rectifier
irfp4229pbf.pdf

PD - 97079BIRFP4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C87 A and Pass Switch Applications

7.3. Size:301K infineon
irfp4229pbf.pdf

7.4. Size:242K inchange semiconductor
irfp4229.pdf

isc N-Channel MOSFET Transistor IRFP4229IIRFP4229FEATURESStatic drain-source on-resistance:RDS(on)46mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Repetitive Peak Current Capability for Reliable OperationShort fall & Rise Times For Fast SwitchingABSOLUTE MAXIM

Otros transistores... IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 , IRFP3703 , IRFP4004 , IRFP4110 , IRFP460 , IRFP4229 , IRFP4232 , IRFP4242 , IRFP4310Z , IRFP4321 , IRFP4332 , IRFP4368 , IRFP4410Z .

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