IRFP4227 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP4227 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 330 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 460 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: TO247AC
📄📄 Copiar
Búsqueda de reemplazo de IRFP4227 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFP4227 datasheet
irfp4227pbf.pdf
PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications
irfp4227.pdf
isc N-Channel MOSFET Transistor IRFP4227 IIRFP4227 FEATURES Static drain-source on-resistance RDS(on) 21m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Switching ABSOLUTE MAXIM
irfp4227pbf.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4227PBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
irfp4229pbf.pdf
PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 87 A and Pass Switch Applications
Otros transistores... IRFP2907Z, IRFP3077, IRFP3206, IRFP3306, IRFP3415, IRFP3703, IRFP4004, IRFP4110, IRFB4110, IRFP4229, IRFP4232, IRFP4242, IRFP4310Z, IRFP4321, IRFP4332, IRFP4368, IRFP4410Z
Parámetros del MOSFET. Cómo se afectan entre sí.
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MSHM60P14 | MSHM40N085 | MSHM30N46 | MSH60N35D | MSH40N032 | MSH30P100 | MSH100N045SA | MSD60P16 | MSD40P45 | MSB100N023 | MS60P03 | MS40P05AU | MS40P05 | MS40N05 | MS34P07 | MS34P01
Popular searches
2sa747 | a1941 | 2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent | tip122 transistor equivalent | irfz44n equivalent | 2n2923
