IRFP4468 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP4468
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 520 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 290 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 230 nS
Cossⓘ - Capacitancia de salida: 1360 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Encapsulados: TO247AC
Búsqueda de reemplazo de IRFP4468 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFP4468 datasheet
..1. Size:296K international rectifier
irfp4468pbf.pdf 
PD -97134 IRFP4468PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m l Uninterruptible Power Supply l High Speed Power Switching max. 2.6m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 290A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ru
..2. Size:564K cn evvo
irfp4468.pdf
IRFP4468 Thunder High Power Products Silicon N-Channel Power MOSFET FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible
..3. Size:244K inchange semiconductor
irfp4468.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4468 IIRFP4468 FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterr
8.1. Size:864K international rectifier
irfp448.pdf
PD - 94899 IRFP448PbF Lead-Free 12/18/03 Document Number 91229 www.vishay.com 1 IRFP448PbF Document Number 91229 www.vishay.com 2 IRFP448PbF Document Number 91229 www.vishay.com 3 IRFP448PbF Document Number 91229 www.vishay.com 4 IRFP448PbF Document Number 91229 www.vishay.com 5 IRFP448PbF Document Number 91229 www.vishay.com 6 IRFP448PbF TO-247AC Package O
8.3. Size:373K international rectifier
auirfp4409.pdf
AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
8.4. Size:283K international rectifier
irfp4410zpbf.pdf
PD - 97309A IRFP4410ZPbF HEXFET Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap
8.5. Size:925K international rectifier
irfp440.pdf
PD - 95198 IRFP440PbF Lead-Free 4/27/04 Document Number 91228 www.vishay.com 1 IRFP440PbF Document Number 91228 www.vishay.com 2 IRFP440PbF Document Number 91228 www.vishay.com 3 IRFP440PbF Document Number 91228 www.vishay.com 4 IRFP440PbF Document Number 91228 www.vishay.com 5 IRFP440PbF Document Number 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Ou
8.8. Size:932K samsung
irfp440a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V
8.9. Size:1449K vishay
irfp440pbf.pdf
IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.85 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 63 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Lead (Pb
8.10. Size:1629K vishay
irfp448 sihfp448.pdf
IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Compli
8.11. Size:1460K vishay
irfp440 sihfp440.pdf
IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.85 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Complian
8.12. Size:1663K vishay
irfp448pbf.pdf
IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Lead
8.13. Size:1634K infineon
irfp448 sihfp448.pdf
IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Compli
8.14. Size:476K infineon
auirfp4409.pdf
AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
8.15. Size:236K inchange semiconductor
irfp442r.pdf
isc N-Channel MOSFET Transistor IRFP442R FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
8.16. Size:237K inchange semiconductor
irfp440a.pdf
isc N-Channel MOSFET Transistor IRFP440A FEATURES Drain Current I = 8.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplie
8.17. Size:237K inchange semiconductor
irfp443r.pdf
isc N-Channel MOSFET Transistor IRFP443R FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
8.18. Size:243K inchange semiconductor
irfp4410z.pdf
isc N-Channel MOSFET Transistor IRFP4410Z IIRFP4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply
8.19. Size:236K inchange semiconductor
irfp441r.pdf
isc N-Channel MOSFET Transistor IRFP441R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
8.20. Size:236K inchange semiconductor
irfp440r.pdf
isc N-Channel MOSFET Transistor IRFP440R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
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