IRFPS3815 Todos los transistores

 

IRFPS3815 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPS3815

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 441 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 105 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 260 nC

Resistencia drenaje-fuente RDS(on): 0.015 Ohm

Empaquetado / Estuche: TO274AA_Super247

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IRFPS3815 Datasheet (PDF)

1.1. irfps3815pbf.pdf Size:131K _upd-mosfet

IRFPS3815
IRFPS3815

PD - 95896 IRFPS3815PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 150V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.015Ω l Fast Switching G l Fully Avalanche Rated ID = 105A l Lead-Free S Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

1.2. irfps3815.pdf Size:101K _international_rectifier

IRFPS3815
IRFPS3815

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.015? Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

 2.1. irfps3810pbf.pdf Size:173K _upd-mosfet

IRFPS3815
IRFPS3815

PD - 95703 IRFPS3810PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.009Ω l Fast Switching G l Fully Avalanche Rated ID = 170A† l Lead-Free S Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

2.2. irfps3810.pdf Size:115K _international_rectifier

IRFPS3815
IRFPS3815

PD - 93912B IRFPS3810 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.009? Fast Switching G Fully Avalanche Rated ID = 170A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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