IRFPS3815 Todos los transistores

 

IRFPS3815 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPS3815

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 441 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 105 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 260 nC

Resistencia drenaje-fuente RDS(on): 0.015 Ohm

Empaquetado / Estuche: TO274AA, Super247

Búsqueda de reemplazo de MOSFET IRFPS3815

 

IRFPS3815 Datasheet (PDF)

1.1. irfps3815pbf.pdf Size:131K _upd-mosfet

IRFPS3815
IRFPS3815

PD - 95896 IRFPS3815PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 150V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.015Ω l Fast Switching G l Fully Avalanche Rated ID = 105A l Lead-Free S Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

1.2. irfps3815.pdf Size:101K _international_rectifier

IRFPS3815
IRFPS3815

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.015? Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

 2.1. irfps3810pbf.pdf Size:173K _upd-mosfet

IRFPS3815
IRFPS3815

PD - 95703 IRFPS3810PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.009Ω l Fast Switching G l Fully Avalanche Rated ID = 170A† l Lead-Free S Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

2.2. irfps3810.pdf Size:115K _international_rectifier

IRFPS3815
IRFPS3815

PD - 93912B IRFPS3810 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.009? Fast Switching G Fully Avalanche Rated ID = 170A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

Otros transistores... IRFP4410Z , IRFP4468 , IRFP4568 , IRFP4668 , IRFP4710 , IRFP4768 , IRFP90N20D , IRFPS3810 , 2N5484 , IRFR1010Z , IRFR1018E , IRFR120Z , IRFR13N15D , IRFR13N20D , IRFR15N20D , IRFR18N15D , IRFR220N .

 

 
Back to Top

 


IRFPS3815
  IRFPS3815
  IRFPS3815
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |

 

 

 
Back to Top