IRFR220N Todos los transistores

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IRFR220N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR220N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 43 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: DPAK

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IRFR220N Datasheet (PDF)

1.1. irfr220n.pdf Size:132K _international_rectifier

IRFR220N
IRFR220N

PD- 94048 IRFR220N SMPS MOSFET IRFU220N HEXFET Power MOSFET Applications VDSS RDS(on) max (m?) ID High frequency DC-DC converters 200V 600 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR22ON IRFU220N and

3.1. irfr220-01.pdf Size:266K _philips

IRFR220N
IRFR220N

IRFR220 N-channel enhancement mode field effect transistor Rev. 01 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: IRFR220 in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance Surface mount package. 3. Applications Switched mode power su

3.2. irfr220.pdf Size:173K _international_rectifier

IRFR220N
IRFR220N

3.3. irfr220pbf irfu220pbf.pdf Size:1880K _international_rectifier

IRFR220N
IRFR220N

PD - 95069A IRFR220PbF IRFU220PbF Lead-Free 12/14/04 Document Number: 91270 www.vishay.com 1 IRFR/U220PbF Document Number: 91270 www.vishay.com 2 IRFR/U220PbF Document Number: 91270 www.vishay.com 3 IRFR/U220PbF Document Number: 91270 www.vishay.com 4 IRFR/U220PbF Document Number: 91270 www.vishay.com 5 IRFR/U220PbF Document Number: 91270 www.vishay.com 6 IRFR/U220PbF

3.4. irfr220a.pdf Size:496K _samsung

IRFR220N
IRFR220N

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

3.5. irfr220 irfu220 sihfr220 sihfu220.pdf Size:1537K _vishay

IRFR220N
IRFR220N

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.80 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR220, SiHFR220) Qgs (nC) 3.0 Straight Lead (IRFU220, SiHFU220) Qgd (nC) 7.9 Available in Tape and Reel Co

3.6. irfr220 irfu220 sihfr220 sihfu220 2.pdf Size:1442K _vishay

IRFR220N
IRFR220N

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.80 RoHS* Surface Mount (IRFR220/SiHFR220) Qg (Max.) (nC) 14 COMPLIANT Straight Lead (IRFU220/SiHFU220) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 7.9 Configuration Single Fast Sw

Otros transistores... IRFPS3815 , IRFR1010Z , IRFR1018E , IRFR120Z , IRFR13N15D , IRFR13N20D , IRFR15N20D , IRFR18N15D , IRFZ48N , IRFR2307Z , IRFR2405 , IRFR2407 , IRFR24N15D , IRFR2607Z , IRFR2905Z , IRFR3410 , IRFR3411 .

 


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