IRFR2407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR2407
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 74 nC
   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: DPAK

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IRFR2407 Datasheet (PDF)

..1. Size:381K international rectifier
irfr2407pbf.pdf

PD-95033AIRFR2407PbFIRFU2407PbF Lead-Freewww.irf.com 112/10/04IRFR/U2407PbF2 www.irf.comIRFR/U2407PbFwww.irf.com 3IRFR/U2407PbF4 www.irf.comIRFR/U2407PbFwww.irf.com 5IRFR/U2407PbF6 www.irf.comIRFR/U2407PbFwww.irf.com 7IRFR/U2407PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat

..2. Size:129K international rectifier
irfr2407.pdf

PD -93862IRFR2407IRFU2407HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407)D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.026G Fully Avalanche RatedDescriptionID = 42A Seventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extremel

..3. Size:381K infineon
irfr2407pbf irfu2407pbf.pdf

..4. Size:134K infineon
irfr2407 irfu2407.pdf

..5. Size:241K inchange semiconductor
irfr2407.pdf

isc N-Channel MOSFET Transistor IRFR2407, IIRFR2407FEATURESStatic drain-source on-resistance:RDS(on)26mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gate-

0.1. Size:473K infineon
auirfr2407.pdf

AUTOMOTIVE GRADE AUIRFR2407 HEXFET Power MOSFET Features Advanced Planar Technology VDSS 75V Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 21.8m 175C Operating Temperature max. 26m Fast Switching Fully Avalanche Rated ID (Silicon Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualifi

7.1. Size:221K international rectifier
irfr2405pbf irfu2405pbf.pdf

PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing

7.2. Size:204K international rectifier
auirfr2405.pdf

PD - 97688AAUTOMOTIVE GRADEAUIRFR2405Features HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSS55V Dynamic dV/dT RatingRDS(on) typ.l Low On-Resistance 11.8ml 175C Operating Temperaturemax 16mGl Fast SwitchingID (Silicon Limited)56Al Fully Avalanche RatedSl Repetitive Avalanche AllowedID (Package Limited)30Aup to Tjmaxl Lead-Free, R

7.3. Size:129K international rectifier
irfr2405.pdf

PD - 93861IRFR2405IRFU2405HEXFET Power MOSFET Surface Mount (IRFR2405) Straight Lead (IRFU2405)D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.016G Fully Avalanche RatedDescriptionID = 56A Seventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extreme

7.4. Size:221K infineon
irfr2405pbf irfu2405pbf.pdf

7.5. Size:241K inchange semiconductor
irfr2405.pdf

isc N-Channel MOSFET Transistor IRFR2405, IIRFR2405FEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 V

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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