IRFR3708 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR3708
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 87 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 61 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 50 nS
Cossⓘ - Capacitancia de salida: 707 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de IRFR3708 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFR3708 datasheet
..1. Size:220K international rectifier
irfr3708pbf irfu3708pbf.pdf 
PD - 95071A IRFR3708PbF SMPS MOSFET IRFU3708PbF HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters VDSS RDS(on) max ID with Synchronous Rectification for Telecom 30V 12.5m 61A and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-P
..2. Size:129K international rectifier
irfr3708.pdf 
PD - 93935B IRFR3708 SMPS MOSFET IRFU3708 HEXFET Power MOSFET Applications High Frequency DC-DC Isolated Converters VDSS RDS(on) max ID with Synchronous Rectification for Telecom 30V 12.5m 61A and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Vol
..3. Size:243K inchange semiconductor
irfr3708.pdf 
isc N-Channel MOSFET Transistor IRFR3708, IIRFR3708 FEATURES Static drain-source on-resistance RDS(on) 12.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
0.1. Size:2739K cn vbsemi
irfr3708tr.pdf 
IRFR3708TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSO
7.1. Size:224K international rectifier
irfr3707pbf.pdf 
PD - 95019A IRFR3707PbF SMPS MOSFET IRFRU3707PbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial use 30V 13m 61A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Ava
7.2. Size:215K international rectifier
irfr3707z.pdf 
PD - 94648 IRFR3707Z IRFU3707Z Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 9.5m 9.6nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche
7.3. Size:300K international rectifier
irfr3709zcpbf irfu3709zcpbf.pdf 
PD - 96046 IRFR3709ZCPbF IRFU3709ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char
7.4. Size:265K international rectifier
irfr3709zpbf irfu3709zpbf.pdf 
PD - 95072A IRFR3709ZPbF IRFU3709ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Chara
7.5. Size:295K international rectifier
irfr3707zcpbf irfu3707zcpbf.pdf 
PD - 96045 IRFR3707ZCPbF IRFU3707ZCPbF Applications l High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 9.5m 9.6nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char
7.6. Size:266K international rectifier
irfr3704zpbf irfu3704zpbf.pdf 
PD - 95442A IRFR3704ZPbF IRFU3704ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 8.4m 9.3nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak
7.7. Size:257K international rectifier
irfr3706cpbf.pdf 
PD - 96065 IRFR3706CPbF SMPS MOSFET IRFU3706CPbF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 9.0m 75A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak
7.8. Size:220K international rectifier
irfr3706 irfu3706.pdf 
PD - 93933B IRFR3706 SMPS MOSFET IRFU3706 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency Isolated DC-DC 20V 9.0m 75A Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalan
7.9. Size:139K international rectifier
irfr3707 irfu3707.pdf 
PD - 93934B IRFR3707 SMPS MOSFET IRFU3707 Applications HEXFET Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial use 30V 13m 61A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current
7.10. Size:221K international rectifier
irfr3704pbf irfu3704pbf.pdf 
PD - 95034A IRFR3704PbF SMPS MOSFET IRFU3704PbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.5m 75A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully
7.11. Size:156K international rectifier
irfr3704 irfu3704.pdf 
PD - 93887D IRFR3704 SMPS MOSFET IRFU3704 Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.5m 75A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Aval
7.12. Size:221K international rectifier
irfr3706pbf irfu3706pbf.pdf 
PD - 95097A IRFR3706PbF SMPS MOSFET IRFU3706PbF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 9.0m 75A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Ch
7.13. Size:546K infineon
irfr3707zpbf irfu3707zpbf.pdf 
IRFR3707ZPbF IRFU3707ZPbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck VDSS 30V Converters for Computer Processor Power RDS(on) max 9.5m High Frequency Isolated DC-DC Converters with Synchronous Rectification Qg 9.6nC for Telecom and Industrial Use D D S S D G G I- Pak D- Pak Benefits IRFU3707ZPbF IRFR3707ZPbF
7.14. Size:1606K cn vbsemi
irfr3709zt.pdf 
IRFR3709ZT www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET AB
7.15. Size:846K cn vbsemi
irfr3709ztr.pdf 
IRFR3709ZTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A
7.16. Size:845K cn vbsemi
irfr3707ztr.pdf 
IRFR3707ZTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABS
7.17. Size:1012K cn vbsemi
irfr3709zct.pdf 
IRFR3709ZCT www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET
7.18. Size:243K inchange semiconductor
irfr3704z.pdf 
isc N-Channel MOSFET Transistor IRFR3704Z, IIRFR3704Z FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So
7.19. Size:243K inchange semiconductor
irfr3707z.pdf 
isc N-Channel MOSFET Transistor IRFR3707Z, IIRFR3707Z FEATURES Static drain-source on-resistance RDS(on) 9.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So
7.20. Size:243K inchange semiconductor
irfr3709zc.pdf 
isc N-Channel MOSFET Transistor IRFR3709ZC, IIRFR3709ZC FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
7.21. Size:243K inchange semiconductor
irfr3709z.pdf 
isc N-Channel MOSFET Transistor IRFR3709Z, IIRFR3709Z FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
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