BF994S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF994S 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 17 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Encapsulados: SOT143
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BF994S datasheet
bf994s 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back di
bf994s 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back di
bf994s.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package wi
Otros transistores... BF989S, BF990, BF990A, BF991, BF992, BF992R, BF993, BF994, IRF830, BF994SR, BF995, BF996, BF996S, BF996SR, BF997, BF998, BF998R
Parámetros del MOSFET. Cómo se afectan entre sí.
History: IXFK48N55 | SST65R600S2 | IRF8714PBF
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