BF994S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF994S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 17 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Paquete / Cubierta: SOT143
Búsqueda de reemplazo de BF994S MOSFET
BF994S datasheet
bf994s 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back di
bf994s 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back di
bf994s.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package wi
Otros transistores... BF989S , BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , AO4407A , BF994SR , BF995 , BF996 , BF996S , BF996SR , BF997 , BF998 , BF998R .
Liste
Recientemente añadidas las descripciónes de los transistores:
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