BF994S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF994S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 17 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Paquete / Cubierta: SOT143
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BF994S Datasheet (PDF)
bf994s 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF994SN-channel dual-gate MOS-FETJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF994SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back di
bf994s 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF994SN-channel dual-gate MOS-FETJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF994SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back di
bf994s.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF994SN-channel dual-gate MOS-FETProduct specification July 1993NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF994SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package wi
Otros transistores... BF989S , BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , BS170 , BF994SR , BF995 , BF996 , BF996S , BF996SR , BF997 , BF998 , BF998R .
History: RS1G300GN
History: RS1G300GN
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