BF994S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF994S
Código: M93_MG_MGp_MGs
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.2 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 17 V
Corriente continua de drenaje (Id): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 1 pF
Resistencia drenaje-fuente RDS(on): 50 Ohm
Empaquetado / Estuche: SOT143
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BF994S Datasheet (PDF)
1.1. bf994s 2.pdf 
Size:32K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes
1.2. bf994s 1.pdf Size:41K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes
1.3. bf994s.pdf Size:180K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION ? Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with in
Otros transistores... BF989S , BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , 2SK4106 , BF994SR , BF995 , BF996 , BF996S , BF996SR , BF997 , BF998 , BF998R .
