IRFR3709ZC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR3709ZC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 86 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 460 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de IRFR3709ZC MOSFET
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IRFR3709ZC datasheet
irfr3709zcpbf irfu3709zcpbf.pdf
PD - 96046 IRFR3709ZCPbF IRFU3709ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char
irfr3709zc.pdf
isc N-Channel MOSFET Transistor IRFR3709ZC, IIRFR3709ZC FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
irfr3709zct.pdf
IRFR3709ZCT www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET
irfr3709zpbf irfu3709zpbf.pdf
PD - 95072A IRFR3709ZPbF IRFU3709ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Chara
Otros transistores... IRFR3505 , IRFR3518 , IRFR3607 , IRFR3704Z , IRFR3707Z , IRFR3707ZC , IRFR3708 , IRFR3709Z , CS150N03A8 , IRFR3710Z , IRFR3711Z , IRFR3711ZC , IRFR3806 , IRFR4104 , IRFR4105Z , IRFR4615 , IRFR4620 .
History: IRFR3504Z
History: IRFR3504Z
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