IRFR3711Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR3711Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 93 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.45 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET IRFR3711Z

IRFR3711Z Datasheet (PDF)

..1. Size:215K international rectifier
irfr3711z.pdf

PD - 94651AIRFR_U3711ZIRFR_U3711ZApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC20V 5.7m: 18nC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avala

..2. Size:262K international rectifier
irfr3711zpbf irfu3711zpbf.pdf

PD - 95074AIRFR3711ZPbFIRFU3711ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-PakI

..3. Size:262K infineon
irfr3711zpbf irfu3711zpbf.pdf

..4. Size:243K inchange semiconductor
irfr3711z.pdf

isc N-Channel MOSFET Transistor IRFR3711Z, IIRFR3711ZFEATURESStatic drain-source on-resistance:RDS(on)5.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

0.1. Size:297K international rectifier
irfr3711zcpbf.pdf

PD - 96050IRFR3711ZCPbFIRFU3711ZCPbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl High Frequency Isolated DC-DC20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl

6.1. Size:232K international rectifier
irfr3711pbf irfu3711pbf.pdf

PD- 95073AIRFR3711PbFSMPS MOSFETIRFU3711PbFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive InducedTu

6.2. Size:163K international rectifier
irfr3711 irfu3711.pdf

PD- 94061BIRFR3711SMPS MOSFETIRFU3711ApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive InducedTurn-on

6.3. Size:232K infineon
irfr3711pbf irfu3711pbf.pdf

6.4. Size:242K inchange semiconductor
irfr3711.pdf

isc N-Channel MOSFET Transistor IRFR3711, IIRFR3711FEATURESStatic drain-source on-resistance:RDS(on)6.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Buck Converters For Server Processor PowerSynchronous FETABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: