IRFS3006-7P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFS3006-7P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 375 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 293 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 200 nC
   Tiempo de subida (tr): 61 nS
   Conductancia de drenaje-sustrato (Cd): 1007 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0021 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET IRFS3006-7P

IRFS3006-7P Datasheet (PDF)

..1. Size:308K international rectifier
irfs3006-7ppbf.pdf

PD - 96187IRFS3006-7PPbFHEXFET Power MOSFETApplications DVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.5ml Uninterruptible Power Supply max. 2.1ml High Speed Power SwitchingGl Hard Switched and High Frequency CircuitsID (Silicon Limited)293ASID (Package Limited)240ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRugged

..2. Size:308K infineon
irfs3006-7ppbf.pdf

0.1. Size:682K infineon
auirfs3006-7p.pdf

AUIRFS3006-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Dynamic dV/dT Rating max. 2.1m 175C Operating Temperature ID (Silicon Limited) 293A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS

6.1. Size:361K international rectifier
irfs3006pbf irfsl3006pbf.pdf

PD - 96188IRFS3006PbFIRFSL3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/

6.2. Size:667K infineon
auirfs3006.pdf

AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

6.3. Size:361K infineon
irfs3006pbf irfsl3006pbf.pdf

6.4. Size:258K inchange semiconductor
irfs3006.pdf

isc N-Channel MOSFET Transistor IRFS3006FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: