IRFS33N15D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFS33N15D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5.5 V
   Qgⓘ - Carga de la puerta: 60 nC
   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET IRFS33N15D

IRFS33N15D Datasheet (PDF)

..1. Size:139K international rectifier
irfs33n15d.pdf

PD- 93903IRFB33N15D IRFS33N15DSMPS MOSFET IRFSL33N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.056 33ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT

..2. Size:279K international rectifier
irfb33n15dpbf irfs33n15dpbf.pdf

PD- 95537IRFB33N15DPbF IRFS33N15DPbFSMPS MOSFET IRFSL33N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.056 33Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc

..3. Size:142K international rectifier
irfb33n15d irfs33n15d irfsl33n15d.pdf

..4. Size:279K infineon
irfb33n15dpbf irfs33n15dpbf irfsl33n15dpbf.pdf

..5. Size:257K inchange semiconductor
irfs33n15d.pdf

Isc N-Channel MOSFET Transistor IRFS33N15DFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

8.1. Size:316K international rectifier
irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

8.2. Size:314K international rectifier
irfs3307pbf.pdf

PD - 95706DIRFB3307PbFIRFS3307PbFIRFSL3307PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS75Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.5.0ml Hard Switched and High Frequency CircuitsG max. 6.3mID120ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterize

8.3. Size:323K international rectifier
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf

IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/

8.4. Size:707K infineon
auirfs3307z auirfsl3307z.pdf

AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

8.5. Size:316K infineon
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf

8.6. Size:681K infineon
auirfs3306.pdf

AUTOMOTIVE GRADE AUIRFS3306 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 175C Operating Temperature 4.2m Fast Switching ID (Silicon Limited) 160A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant Automotive Q

8.7. Size:327K infineon
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf

8.8. Size:252K inchange semiconductor
irfs3306.pdf

isc N-Channel MOSFET Transistor IRFS3306FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

8.9. Size:214K inchange semiconductor
irfs3307ztrl.pdf

isc N-Channel MOSFET Transistor IRFS3307ZTRLDESCRIPTIONDrain Current I =120A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationHard switched and high frequency circuitsUninterruptible power supplyABSOLUTE MAXIMUM R

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