IRFS3607 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS3607
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de IRFS3607 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFS3607 datasheet
irfb3607pbf irfs3607pbf irfsl3607pbf.pdf
PD - 97308C IRFB3607PbF IRFS3607PbF Applications IRFSL3607PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characteriz
irfs3607.pdf
Isc N-Channel MOSFET Transistor IRFS3607 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
auirfs3607 auirfsl3607.pdf
AUIRFS3607 AUTOMOTIVE GRADE AUIRFSL3607 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 7.34m Low On-Resistance 175 C Operating Temperature max. 9.0m Fast Switching ID 80A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifi
irfs340b.pdf
November 2001 IRFS340B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 400V, RDS(on) = 0.54 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to Fast sw
irfs350a.pdf
IRFS350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 11.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character
irfs340a.pdf
IRFS340A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character
irfs3006-7ppbf.pdf
PD - 96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.5m l Uninterruptible Power Supply max. 2.1m l High Speed Power Switching G l Hard Switched and High Frequency Circuits ID (Silicon Limited) 293A S ID (Package Limited) 240A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged
irfb3207 irfs3207 irfsl3207.pdf
PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn
irfb33n15dpbf irfs33n15dpbf irfsl33n15dpbf.pdf
PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc
irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf
PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av
irfs33n15d.pdf
PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T
irfb33n15dpbf irfs33n15dpbf.pdf
PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf
PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A c Benefits ID (Package Limited) 195A S l Improved Gate,
irfb3206pbf irfs3206pbf irfsl3206pbf.pdf
IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification D VDSS 60V in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply max. 3.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A Benefits S l Improved Gate, Avalanche and Dynamic D
irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf
IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur
irfs31n20d.pdf
PD- 93805B IRFB31N20D IRFS31N20D SMPS MOSFET IRFSL31N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.082 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche
irfs3307pbf.pdf
PD - 95706D IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply l High Speed Power Switching RDS(on) typ. 5.0m l Hard Switched and High Frequency Circuits G max. 6.3m ID 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterize
irfb38n20dpbf irfs38n20dpbf.pdf
PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications Key Parameters l High frequency DC-DC converters VDS 200 V l Plasma Display Panel VDS (Avalanche) min. 260 V Benefits RDS(ON) max @ 10V m 54 l Low Gate-to-Drain Charge to TJ max 175 C Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify De
irfb3806pbf irfs3806pbf irfsl3806pbf.pdf
PD - 97310 IRFB3806PbF IRFS3806PbF Applications IRFSL3806PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf
PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av
irfs3207pbf.pdf
PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 3.6m G max. 4.5m Benefits S ID 170A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized
irfb33n15d irfs33n15d irfsl33n15d.pdf
PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T
irfs3004-7ppbf.pdf
PD - 97378A IRFS3004-7PPbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 0.90m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.25m G ID (Silicon Limited) 400A Benefits ID (Package Limited) 240A S l Improved Gate, Avalanche and Dynamic dV/dt
irfs3107pbf irfsl3107pbf.pdf
PD -97144A IRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.5m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 230A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dyn
irfs3006pbf irfsl3006pbf.pdf
PD - 96188 IRFS3006PbF IRFSL3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/
irfb3507pbf irfs3507pbf irfsl3507pbf.pdf
PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 7.0m l Hard Switched and High Frequency Circuits l Lead-Free G max. 8.8m ID 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf
IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur
irfs3107-7ppbf.pdf
IRFS3107-7PPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.1m l Uninterruptible Power Supply max. 2.6m l High Speed Power Switching G l Hard Switched and High Frequency Circuits ID 260A S ID (Package Limited) 240A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized C
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf
IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A Benefits ID (Package Limited) 120A S l Improved Gate, Avalanche and Dynamic dV/
irfs38n20d.pdf
PD - 94358 IRFB38N20D IRFS38N20D SMPS MOSFET IRFSL38N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.054 44A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf
IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic
irfs30n20d.pdf
PD- 93832 IRFB30N20D IRFS30N20D SMPS MOSFET IRFL30N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.082 30A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche Vo
irfs3507pbf.pdf
PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 7.0m l Hard Switched and High Frequency Circuits l Lead-Free G max. 8.8m ID 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S
auirfs3206 auirfsl3206.pdf
AUIRFS3206 AUTOMOTIVE GRADE AUIRFSL3206 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.4m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 210A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tj
auirfs3107-7p.pdf
AUTOMOTIVE GRADE AUIRFS3107-7P HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.1m Ultra Low On-Resistance max. 2.6m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 260A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lea
auirfs3006.pdf
AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl
auirfs3004-7p.pdf
AUIRFS3004-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.90m Ultra Low On-Resistance 175 C Operating Temperature max. 1.25m Fast Switching ID (Silicon Limited) 400A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Q
auirfs3307z auirfsl3307z.pdf
AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant
auirfs3006-7p.pdf
AUIRFS3006-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Dynamic dV/dT Rating max. 2.1m 175 C Operating Temperature ID (Silicon Limited) 293A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS
auirfs3306.pdf
AUTOMOTIVE GRADE AUIRFS3306 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 175 C Operating Temperature 4.2m Fast Switching ID (Silicon Limited) 160A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant Automotive Q
irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 V RDS(on) max @ 10V 54 m Benefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D
auirfs3107 auirfsl3107.pdf
AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t
auirfs3806.pdf
AUTOMOTIVE GRADE AUIRFS3806 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 12.6m 175 C Operating Temperature Fast Switching max. 15.8m Repetitive Avalanche Allowed up to Tjmax ID 43A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications
irfs3206.pdf
isc N-Channel MOSFET Transistor IRFS3206 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs3306.pdf
isc N-Channel MOSFET Transistor IRFS3306 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs33n15d.pdf
Isc N-Channel MOSFET Transistor IRFS33N15D FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
irfs3207.pdf
Isc N-Channel MOSFET Transistor IRFS3207 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
irfs3207z.pdf
Isc N-Channel MOSFET Transistor IRFS3207Z FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
irfs31n20d.pdf
Isc N-Channel MOSFET Transistor IRFS31N20D FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
irfs3004.pdf
isc N-Channel MOSFET Transistor IRFS3004 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs3806.pdf
isc N-Channel MOSFET Transistor IRFS3806 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs3107pbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS3107PbF FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
irfs3006.pdf
isc N-Channel MOSFET Transistor IRFS3006 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
irfs38n20d.pdf
Isc N-Channel MOSFET Transistor IRFS38N20D FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo
irfs3307ztrl.pdf
isc N-Channel MOSFET Transistor IRFS3307ZTRL DESCRIPTION Drain Current I =120A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching application Hard switched and high frequency circuits Uninterruptible power supply ABSOLUTE MAXIMUM R
Otros transistores... IRFS3206 , IRFS3207 , IRFS3207Z , IRFS3306 , IRFS3307 , IRFS3307Z , IRFS33N15D , IRFS3507 , STP65NF06 , IRFS3806 , IRFS38N20D , IRFS4010 , IRFS4010-7P , IRFS4115 , IRFS4115-7P , IRFS4127 , IRFS41N15D .
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