IRFS38N20D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS38N20D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 320 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 44 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 95 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm
Paquete / Cubierta: D2PAK
- Selección de transistores por parámetros
IRFS38N20D Datasheet (PDF)
irfb38n20dpbf irfs38n20dpbf.pdf

PD - 97001CIRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbFHEXFET Power MOSFETApplicationsKey Parametersl High frequency DC-DC convertersVDS200 Vl Plasma Display PanelVDS (Avalanche) min.260 VBenefitsRDS(ON) max @ 10V m54l Low Gate-to-Drain Charge toTJ max175 CReduce Switching Lossesl Fully Characterized CapacitanceIncluding Effective COSS to SimplifyDe
irfs38n20d.pdf

PD - 94358IRFB38N20D IRFS38N20DSMPS MOSFET IRFSL38N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.054 44ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current
irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 VRDS(on) max @ 10V 54 mBenefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D
irfs38n20d.pdf

Isc N-Channel MOSFET Transistor IRFS38N20DFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 2SK1470 | S80N08R | BUK9830-30 | AP2312GN | AOB190A60L | SCT2160KE | VBP1104N
History: 2SK1470 | S80N08R | BUK9830-30 | AP2312GN | AOB190A60L | SCT2160KE | VBP1104N



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