IRFS4010 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFS4010
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 143 nC
   trⓘ - Tiempo de subida: 86 nS
   Cossⓘ - Capacitancia de salida: 660 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET IRFS4010

IRFS4010 Datasheet (PDF)

..1. Size:292K international rectifier
irfs4010pbf irfsl4010pbf.pdf

PD - 96186AIRFS4010PbFIRFSL4010PbFHEXFET Power MOSFETApplications DVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 3.9ml High Speed Power SwitchingG max. 4.7ml Hard Switched and High Frequency CircuitsID 180ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Ca

..2. Size:258K inchange semiconductor
irfs4010.pdf

Isc N-Channel MOSFET Transistor IRFS4010FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

0.1. Size:313K international rectifier
irfs4010-7ppbf.pdf

PD - 97343IRFS4010-7PPbFHEXFET Power MOSFETApplications DVDSS 100Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ. 3.3ml High Speed Power SwitchingGmax. 4.0ml Hard Switched and High Frequency CircuitsID 190ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized Capacitance and

0.2. Size:313K infineon
irfs4010-7ppbf.pdf

0.3. Size:711K infineon
auirfs4010 auirfsl4010.pdf

AUIRFS4010 AUTOMOTIVE GRADE AUIRFSL4010 HEXFET Power MOSFET VDSS 100V Features Advanced Process Technology RDS(on) typ. 3.9m Ultra Low On-Resistance max. 4.7m 175C Operating Temperature Fast Switching ID 180A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

0.4. Size:702K infineon
auirfs4010-7p.pdf

AUTOMOTIVE GRADE AUIRFS4010-7P HEXFET Power MOSFET VDSS 100V Features RDS(on) typ. 3.3m Advanced Process Technology Ultra Low On-Resistance max. 4.0m Enhanced dV/dT and dI/dT capability ID 190A 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KQB12P20

Liste

Recientemente añadidas las descripciónes de los transistores: