IRFS4010 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFS4010 datasheet

..1. Size:292K international rectifier
irfs4010pbf irfsl4010pbf.pdf pdf_icon

PD - 96186A IRFS4010PbF IRFSL4010PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.9m l High Speed Power Switching G max. 4.7m l Hard Switched and High Frequency Circuits ID 180A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Ca

..2. Size:258K inchange semiconductor
irfs4010.pdf pdf_icon

Isc N-Channel MOSFET Transistor IRFS4010 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

0.1. Size:313K international rectifier
irfs4010-7ppbf.pdf pdf_icon

PD - 97343 IRFS4010-7PPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching G max. 4.0m l Hard Switched and High Frequency Circuits ID 190A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacitance and

0.2. Size:711K infineon
auirfs4010 auirfsl4010.pdf pdf_icon

AUIRFS4010 AUTOMOTIVE GRADE AUIRFSL4010 HEXFET Power MOSFET VDSS 100V Features Advanced Process Technology RDS(on) typ. 3.9m Ultra Low On-Resistance max. 4.7m 175 C Operating Temperature Fast Switching ID 180A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S