IRFS4115 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFS4115
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 99 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 77 nC
   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0121 Ohm
   Paquete / Cubierta: D2PAK

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IRFS4115 Datasheet (PDF)

..1. Size:286K international rectifier
irfs4115pbf irfsl4115pbf.pdf

PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic

..2. Size:286K infineon
irfs4115pbf irfsl4115pbf.pdf

..3. Size:204K inchange semiconductor
irfs4115pbf.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS4115PbFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

0.1. Size:302K international rectifier
irfs4115-7ppbf.pdf

PD -97147IRFS4115-7PPbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.10.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 11.8m:ID 105ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

0.2. Size:680K infineon
auirfs4115-7p.pdf

AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 150V Ultra Low On-Resistance RDS(on) typ. 10m Dynamic dV/dT Rating max. 11.8m 175C Operating Temperature ID 105A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Descrip

0.3. Size:302K infineon
irfs4115-7ppbf.pdf

0.4. Size:722K infineon
auirfs4115 auirfsl4115.pdf

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

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