IRFS4115-7P Todos los transistores

 

IRFS4115-7P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFS4115-7P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 380 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0118 Ohm
   Paquete / Cubierta: D2PAK

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IRFS4115-7P Datasheet (PDF)

 ..1. Size:302K  international rectifier
irfs4115-7ppbf.pdf

IRFS4115-7P
IRFS4115-7P

PD -97147IRFS4115-7PPbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.10.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 11.8m:ID 105ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

 ..2. Size:302K  infineon
irfs4115-7ppbf.pdf

IRFS4115-7P
IRFS4115-7P

PD -97147IRFS4115-7PPbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.10.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 11.8m:ID 105ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

 0.1. Size:680K  infineon
auirfs4115-7p.pdf

IRFS4115-7P
IRFS4115-7P

AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 150V Ultra Low On-Resistance RDS(on) typ. 10m Dynamic dV/dT Rating max. 11.8m 175C Operating Temperature ID 105A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Descrip

 6.1. Size:286K  international rectifier
irfs4115pbf irfsl4115pbf.pdf

IRFS4115-7P
IRFS4115-7P

PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic

 6.2. Size:286K  infineon
irfs4115pbf irfsl4115pbf.pdf

IRFS4115-7P
IRFS4115-7P

PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic

 6.3. Size:722K  infineon
auirfs4115 auirfsl4115.pdf

IRFS4115-7P
IRFS4115-7P

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

 6.4. Size:204K  inchange semiconductor
irfs4115pbf.pdf

IRFS4115-7P
IRFS4115-7P

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS4115PbFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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