IRFS4321 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFS4321
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 350 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 71 nC
   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET IRFS4321

IRFS4321 Datasheet (PDF)

..1. Size:353K international rectifier
irfs4321pbf irfsl4321pbf.pdf

PD - 97105CIRFS4321PbFIRFSL4321PbFApplicationsHEXFET Power MOSFETl Motion Control ApplicationsVDSS 150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.12m:l Hard Switched and High Frequency Circuitsmax. 15m:Benefits85A cIDl Low RDSON Reduces Lossesl Low Gate Charge Improves the SwitchingD PerformanceDD

..2. Size:258K inchange semiconductor
irfs4321.pdf

Isc N-Channel MOSFET Transistor IRFS4321FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

0.1. Size:404K international rectifier
irfs4321-7ppbf.pdf

IRFS4321-7PPbF HEXFET Power MOSFET Application Motion Control Applications DVDSS 150V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 11.7m Hard Switched and High Frequency Circuits G 14.7mmax SID 86A Benefits Low Rdson Reduces Losses Low Gate Charge Improves the Sw

8.1. Size:324K international rectifier
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

8.2. Size:376K international rectifier
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf

PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

8.3. Size:334K international rectifier
auirfs4310trl.pdf

PD - 96324AUTOMOTIVE GRADEAUIRFS4310AUIRFSL4310FeaturesHEXFET Power MOSFETl Advanced Process TechnologyV(BR)DSSl Ultra Low On-Resistance 100VDl 175C Operating TemperatureRDS(on) typ.5.6ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmaxmax. 7.0mGl Lead-Free, RoHS CompliantID (Silicon Limited) 130A l Automotive Qualified *SID (Package L

8.4. Size:324K infineon
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

8.5. Size:376K infineon
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf

8.6. Size:672K infineon
auirfs4310z.pdf

AUTOMOTIVE GRADE AUIRFS4310Z HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 127A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS

8.7. Size:712K infineon
auirfs4310 auirfsl4310.pdf

AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au

8.8. Size:258K inchange semiconductor
irfs4310z.pdf

Isc N-Channel MOSFET Transistor IRFS4310ZFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

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