IRFS4410Z Todos los transistores

 ..1. Size:330K  international rectifier
 irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l

 ..2. Size:258K  inchange semiconductor
 irfs4410z.pdf

Isc N-Channel MOSFET Transistor IRFS4410Z FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 0.1. Size:289K  international rectifier
 auirfs4410z auirfsl4410z.pdf

PD - 96405A AUTOMOTIVE GRADE AUIRFS4410Z AUIRFSL4410Z Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D VDSS 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) typ. 7.2m l Lead-Free, RoHS Compliant max. 9.0m G l Automotive Qualified * ID 97A S Description Specifically desig

 6.1. Size:799K  international rectifier
 irfb4410pbf irfs4410pbf irfsl4410pbf.pdf

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 6.2. Size:799K  international rectifier
 irfs4410pbf irfsl4410pbf.pdf

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 6.3. Size:802K  international rectifier
 irfb4410 irfs4410 irfsl4410.pdf

PD - 96902C IRFB4410 IRFS4410 IRFSL4410 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m Benefits ID 96A l Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness l Fully Characterized Capacita

 6.4. Size:258K  inchange semiconductor
 irfs4410.pdf

Isc N-Channel MOSFET Transistor IRFS4410 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt