IRFS4610 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFS4610
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 190 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 73 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 90 nC
   Tiempo de subida (tr): 87 nS
   Conductancia de drenaje-sustrato (Cd): 260 pF
   Resistencia entre drenaje y fuente RDS(on): 0.014 Ohm
   Paquete / Cubierta: D2PAK

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IRFS4610 Datasheet (PDF)

..1. Size:399K international rectifier
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

..2. Size:399K infineon
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

..3. Size:381K infineon
irfb4610 irfs4610 irfsl4610.pdf

PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita

..4. Size:258K inchange semiconductor
irfs4610.pdf

Isc N-Channel MOSFET Transistor IRFS4610FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

0.1. Size:340K international rectifier
auirfs4610trl.pdf

PD - 96325AUTOMOTIVE GRADEAUIRFB4610AUIRFS4610Features HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV(BR)DSS100V Enhanced dV/dT and dI/dT capabilityRDS(on) typ.11m 175C Operating Temperature Fast Switching max. 14mG Repetitive Avalanche Allowed up to TjmaxID73A Lead-Free, RoHS Compliant S Automotive Qualified *DDescripti

0.2. Size:717K infineon
auirfb4610 auirfs4610.pdf

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

7.1. Size:365K international rectifier
irfs4615pbf irfsl4615pbf.pdf

PD -96202IRFS4615PbFIRFSL4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.34.5ml High Speed Power SwitchingG max. 42ml Hard Switched and High Frequency CircuitsID 33ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capac

7.2. Size:365K infineon
irfs4615pbf irfsl4615pbf.pdf

7.3. Size:257K inchange semiconductor
irfs4615.pdf

Isc N-Channel MOSFET Transistor IRFS4615FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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