BF996SR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF996SR 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 17 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 2.6 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
Encapsulados: SOT143R
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BF996SR datasheet
bf996s.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package w
bf996s 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back d
bf996s 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back d
Otros transistores... BF992R, BF993, BF994, BF994S, BF994SR, BF995, BF996, BF996S, IRF3205, BF997, BF998, BF998R, BF998WR, BFC10, BFC11, BFC12, BFC13
Parámetros del MOSFET. Cómo se afectan entre sí.
History: 2N60G-T60-K | IRFH8318PBF | IRFB3806
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