IRFSL3004 Todos los transistores

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IRFSL3004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFSL3004

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 380 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 340 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.00175 Ohm

Empaquetado / Estuche: TO262

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IRFSL3004 Datasheet (PDF)

4.1. irfb33n15d irfs33n15d irfsl33n15d.pdf Size:142K _international_rectifier

IRFSL3004
IRFSL3004

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056Ω 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

5.1. irfsl11n50.pdf Size:111K _international_rectifier

IRFSL3004
IRFSL3004

PD- 91847B IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55? Simple Drive Requirements G ID = 11A S Description Third Generation HEXFET Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resi

5.2. irfsl11n50apbf.pdf Size:827K _international_rectifier

IRFSL3004
IRFSL3004

PD- 95231 IRFSL11N50APbF Lead-Free 04/29/04 Document Number: 91288 www.vishay.com 1 IRFSL11N50APbF Document Number: 91288 www.vishay.com 2 IRFSL11N50APbF Document Number: 91288 www.vishay.com 3 IRFSL11N50APbF Document Number: 91288 www.vishay.com 4 IRFSL11N50APbF Document Number: 91288 www.vishay.com 5 IRFSL11N50APbF Document Number: 91288 www.vishay.com 6 IRFSL11N50AP

5.3. irfs23n15d irfb23n15d irfsl23n15d.pdf Size:142K _international_rectifier

IRFSL3004
IRFSL3004

PD - 93894A IRFB23N15D IRFS23N15D SMPS MOSFET IRFSL23N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090Ω 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalan

5.4. irfsl9n60a.pdf Size:132K _international_rectifier

IRFSL3004
IRFSL3004

PD - 91814A SMPS MOSFET IRFSL9N60A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) 600V 0.75? 9.2A Uninterruptable Power Supply High speed power switching This device is only for through hole application. Benefits G D S Low Gate Charge Qg results in Simple Drive Requirement TO-262 Improved Gate, Avalanche and dynamic dv/dt Ruggedness

5.5. irfsl11n50a.pdf Size:107K _international_rectifier

IRFSL3004
IRFSL3004

PD- 91847A IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55? Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and co

5.6. irfsl9n60a sihfsl9n60a.pdf Size:194K _vishay

IRFSL3004
IRFSL3004

IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (?)VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 49 Requirement Qgs (nC) 13 Improved Gate, Avalanche and Dynamic Qgd (nC) 20 dV/dt Ruggedness Configuration Single Fully Characterized Capacitance a

5.7. irfsl11n50a sihfsl11n50a.pdf Size:305K _vishay

IRFSL3004
IRFSL3004

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK (TO-262) Third

Otros transistores... IRFS4610 , IRFS4615 , IRFS4620 , IRFS52N15D , IRFS5615 , IRFS5620 , IRFS59N10D , IRFSL23N20D , IRF840 , IRFSL3006 , IRFSL3107 , IRFSL31N20D , IRFSL3206 , IRFSL3306 , IRFSL33N15D , IRFSL3507 , IRFSL3607 .

 


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