IRFSL3507 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFSL3507 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 97 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 81 nS
Cossⓘ - Capacitancia de salida: 340 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
Encapsulados: TO262
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IRFSL3507 datasheet
..1. Size:430K international rectifier
irfb3507pbf irfs3507pbf irfsl3507pbf.pdf 
PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 7.0m l Hard Switched and High Frequency Circuits l Lead-Free G max. 8.8m ID 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S
8.1. Size:379K international rectifier
irfsl3207.pdf
PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn
8.2. Size:379K international rectifier
irfb3207 irfs3207 irfsl3207.pdf
PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn
8.3. Size:279K international rectifier
irfb33n15dpbf irfs33n15dpbf irfsl33n15dpbf.pdf
PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc
8.4. Size:316K international rectifier
irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf
PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av
8.5. Size:457K international rectifier
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf
PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A c Benefits ID (Package Limited) 195A S l Improved Gate,
8.6. Size:323K international rectifier
irfb3206pbf irfs3206pbf irfsl3206pbf.pdf
IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification D VDSS 60V in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply max. 3.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A Benefits S l Improved Gate, Avalanche and Dynamic D
8.7. Size:290K international rectifier
irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf
IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur
8.8. Size:564K international rectifier
irfb3806pbf irfs3806pbf irfsl3806pbf.pdf
PD - 97310 IRFB3806PbF IRFS3806PbF Applications IRFSL3806PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C
8.9. Size:316K international rectifier
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf
PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av
8.10. Size:142K international rectifier
irfb33n15d irfs33n15d irfsl33n15d.pdf
PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T
8.11. Size:371K international rectifier
irfs3107pbf irfsl3107pbf.pdf
PD -97144A IRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.5m l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 230A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dyn
8.12. Size:361K international rectifier
irfs3006pbf irfsl3006pbf.pdf
PD - 96188 IRFS3006PbF IRFSL3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m l Uninterruptible Power Supply l High Speed Power Switching max. 2.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 270A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/
8.13. Size:715K international rectifier
irfsl38n20dpbf.pdf
PD - 97001A PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF SMPS MOSFET IRFSL38N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters Key Parameters l Plasma Display Panel VDS 200 V l Lead-Free VDS (Avalanche) min. 260 V RDS(ON) max @ 10V m 54 Benefits TJ max 175 C l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Inc
8.14. Size:290K international rectifier
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf
IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Cur
8.15. Size:327K international rectifier
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf
IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A Benefits ID (Package Limited) 120A S l Improved Gate, Avalanche and Dynamic dV/
8.16. Size:321K international rectifier
irfb3607pbf irfs3607pbf irfsl3607pbf.pdf
PD - 97308C IRFB3607PbF IRFS3607PbF Applications IRFSL3607PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D l High Speed Power Switching VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m G max. 9.0m Benefits ID 80A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characteriz
8.17. Size:330K international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf
IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic
8.18. Size:716K infineon
auirfs3206 auirfsl3206.pdf
AUIRFS3206 AUTOMOTIVE GRADE AUIRFSL3206 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.4m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 210A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tj
8.20. Size:707K infineon
auirfs3307z auirfsl3307z.pdf
AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant
8.22. Size:709K infineon
auirfs3607 auirfsl3607.pdf
AUIRFS3607 AUTOMOTIVE GRADE AUIRFSL3607 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 7.34m Low On-Resistance 175 C Operating Temperature max. 9.0m Fast Switching ID 80A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifi
8.23. Size:583K infineon
irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 V RDS(on) max @ 10V 54 m Benefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D
8.24. Size:716K infineon
auirfs3107 auirfsl3107.pdf
AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t
8.25. Size:256K inchange semiconductor
irfsl31n20d.pdf
Isc N-Channel MOSFET Transistor IRFSL31N20D FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage
8.26. Size:256K inchange semiconductor
irfsl38n20d.pdf
Isc N-Channel MOSFET Transistor IRFS38N20D FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 2
8.27. Size:255K inchange semiconductor
irfsl33n15d.pdf
Isc N-Channel MOSFET Transistor IRFSL33N15D FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistanceV 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage
8.28. Size:214K inchange semiconductor
irfsl3107pbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL3107PbF FEATURES With TO-262(DPAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... IRFSL23N20D, IRFSL3004, IRFSL3006, IRFSL3107, IRFSL31N20D, IRFSL3206, IRFSL3306, IRFSL33N15D, IRF1404, IRFSL3607, IRFSL3806, IRFSL38N20D, IRFSL4010, IRFSL4115, IRFSL4127, IRFSL41N15D, IRFSL4227
