IRFSL4410Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4410ZFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

PD - 96405AAUTOMOTIVE GRADEAUIRFS4410ZAUIRFSL4410ZFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating TemperatureDVDSS100Vl Fast Switchingl Repetitive Avalanche Allowed up to Tjmax RDS(on) typ.7.2ml Lead-Free, RoHS Compliant max. 9.0mGl Automotive Qualified *ID 97ASDescriptionSpecifically desig

PD - 95707EIRFB4410PbFIRFS4410PbFIRFSL4410PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power SwitchingRDS(on) typ. 8.0ml Hard Switched and High Frequency CircuitsG max. 10mIDS 88ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

PD - 95707EIRFB4410PbFIRFS4410PbFIRFSL4410PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power SwitchingRDS(on) typ. 8.0ml Hard Switched and High Frequency CircuitsG max. 10mIDS 88ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

PD - 96902CIRFB4410IRFS4410IRFSL4410ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS100Vl High Speed Power SwitchingRDS(on) typ.8.0ml Hard Switched and High Frequency CircuitsG max. 10mBenefitsID96Al Improved Gate, Avalanche and Dynamic dV/dtSRuggednessl Fully Characterized Capacita

isc N-Channel MOSFET Transistor IRFSL4410FEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME