IRFSL4610 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFSL4610
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 73 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 87 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: TO262
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IRFSL4610 Datasheet (PDF)
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
irfb4610 irfs4610 irfsl4610.pdf

PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita
irfsl4610.pdf

isc N-Channel MOSFET Transistor IRFSL4610FEATURESStatic drain-source on-resistance:RDS(on) 13.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
irfs4615pbf irfsl4615pbf.pdf

PD -96202IRFS4615PbFIRFSL4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.34.5ml High Speed Power SwitchingG max. 42ml Hard Switched and High Frequency CircuitsID 33ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capac
Otros transistores... IRFSL4127 , IRFSL41N15D , IRFSL4227 , IRFSL4310 , IRFSL4310Z , IRFSL4321 , IRFSL4410 , IRFSL4410Z , STP75NF75 , IRFSL4615 , IRFSL4620 , IRFSL5615 , IRFSL5620 , IRFSL59N10D , IRFTS8342 , IRFU1010Z , IRFU1018E .
History: NVMTS0D7N04C | 30N06L-TA3-T | BSC100N10NSFG | CEM4269 | 18P10E
History: NVMTS0D7N04C | 30N06L-TA3-T | BSC100N10NSFG | CEM4269 | 18P10E



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