BF998R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF998R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V

|Id|ⓘ - Corriente continua de drenaje: 0.03 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 2.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm

Encapsulados: SOT143R

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BF998R datasheet

 ..1. Size:114K  philips
bf998 bf998r 1.pdf pdf_icon

BF998R

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admit

 ..2. Size:79K  philips
bf998 bf998r 2.pdf pdf_icon

BF998R

DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admit

 ..3. Size:33K  siemens
bf998r.pdf pdf_icon

BF998R

BF 998R Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package - BF 998R MOs Q62702-F1177 1 = D 2 = S 3 = G1 4 = G2 SOT-143R All e

 ..4. Size:90K  infineon
bf998 bf998r.pdf pdf_icon

BF998R

BF998... Silicon N_Channel MOSFET Tetrode Short-channel transistor with high S / C quality factor For low-noise, gain-controlled input stage up to 1 GHz Pb-free (RoHS compliant) package1) Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 SOT143 1=S 2=D 3=G2 4=G1 - - M

Otros transistores... BF994S, BF994SR, BF995, BF996, BF996S, BF996SR, BF997, BF998, IRF840, BF998WR, BFC10, BFC11, BFC12, BFC13, BFC14, BFC15, BFC16