BF998R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF998R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 2.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
Encapsulados: SOT143R
Búsqueda de reemplazo de BF998R MOSFET
- Selecciónⓘ de transistores por parámetros
BF998R datasheet
bf998 bf998r 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admit
bf998 bf998r 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification 1996 Aug 01 Supersedes data of April 1991 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer handbook, halfpage d 4 3 admit
bf998r.pdf
BF 998R Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package - BF 998R MOs Q62702-F1177 1 = D 2 = S 3 = G1 4 = G2 SOT-143R All e
bf998 bf998r.pdf
BF998... Silicon N_Channel MOSFET Tetrode Short-channel transistor with high S / C quality factor For low-noise, gain-controlled input stage up to 1 GHz Pb-free (RoHS compliant) package1) Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 SOT143 1=S 2=D 3=G2 4=G1 - - M
Otros transistores... BF994S, BF994SR, BF995, BF996, BF996S, BF996SR, BF997, BF998, IRF840, BF998WR, BFC10, BFC11, BFC12, BFC13, BFC14, BFC15, BFC16
History: 10N80G-T3P-T
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
c1213 transistor | 2sc1400 replacement | 2sb817 | mn2488 datasheet | c2026 transistor | 2n3903 transistor | 2n4360 | 2n2613
