IRFU1018E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFU1018E 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 110 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 79 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 35 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Encapsulados: IPAK
Búsqueda de reemplazo de IRFU1018E MOSFET
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IRFU1018E datasheet
..1. Size:368K international rectifier
irfr1018epbf irfu1018epbf.pdf 
PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching max. 8.4m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 79A c ID (Package Limited) S 56A Benefits l Improved Gate, Avalanche and Dyna
..2. Size:261K inchange semiconductor
irfu1018e.pdf
isc N-Channel MOSFET Transistor IRFU1018E FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
7.1. Size:328K international rectifier
irfr1010zpbf irfu1010zpbf.pdf
PD - 95951A IRFR1010ZPbF IRFU1010ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 7.5m G Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re
7.2. Size:261K inchange semiconductor
irfu1010z.pdf
isc N-Channel MOSFET Transistor IRFU1010Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.4. Size:109K international rectifier
irfu12n25d.pdf
PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I
9.5. Size:231K international rectifier
irfr1n60apbf irfu1n60apbf.pdf
PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance
9.6. Size:394K international rectifier
irfr1205pbf irfu1205pbf.pdf
PD - 95600A IRFR/U1205PbF Lead-Free www.irf.com 1 12/9/04 IRFR/U1205PbF 2 www.irf.com IRFR/U1205PbF www.irf.com 3 IRFR/U1205PbF 4 www.irf.com IRFR/U1205PbF www.irf.com 5 IRFR/U1205PbF 6 www.irf.com IRFR/U1205PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Tr
9.7. Size:309K international rectifier
auirfu120z auirfr120z.pdf
PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall
9.8. Size:257K international rectifier
irfr1n60apbf irfu1n60apbf.pdf
PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance
9.9. Size:222K international rectifier
irfu13n15dpbf irfr13n15dpbf.pdf
PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.18 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa
9.10. Size:1868K international rectifier
irfr110pbf irfu110pbf.pdf
PD - 95026A IRFR110PbF IRFU110PbF Lead-Free 12/14/04 Document Number 91265 www.vishay.com 1 IRFR/U110PbF Document Number 91265 www.vishay.com 2 IRFR/U110PbF Document Number 91265 www.vishay.com 3 IRFR/U110PbF Document Number 91265 www.vishay.com 4 IRFR/U110PbF Document Number 91265 www.vishay.com 5 IRFR/U110PbF Document Number 91265 www.vishay.com 6 IRFR/U1
9.11. Size:390K international rectifier
irfr120npbf irfu120npbf.pdf
PD - 95067A IRFR/U120NPbF Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP
9.12. Size:318K international rectifier
irfr120zpbf irfu120zpbf.pdf
PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 190m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 8.7A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- r
9.13. Size:225K international rectifier
irfr12n25dpbf irfu12n25dpbf.pdf
PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa
9.14. Size:225K international rectifier
irfr15n20dpbf irfu15n20dpbf.pdf
PD - 95355A IRFR15N20DPbF SMPS MOSFET IRFU15N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.165 17A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-P
9.15. Size:684K international rectifier
irfr13n20dpbf irfu13n20dpbf.pdf
PD-95354A SMPS MOSFET IRFR13N20DPbF IRFU13N20DPbF Lead-Free www.irf.com 1 1/17/05 IRFR/U13N20DPbF 2 www.irf.com IRFR/U13N20DPbF www.irf.com 3 IRFR/U13N20DPbF 4 www.irf.com IRFR/U13N20DPbF www.irf.com 5 IRFR/U13N20DPbF 6 www.irf.com IRFR/U13N20DPbF www.irf.com 7 IRFR/U13N20DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (T
9.16. Size:220K international rectifier
irfr18n15dpbf irfu18n15dpbf.pdf
PD - 95061A IRFR18N15DPbF IRFU18N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.125 18A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak l Fully Characterized Avalanche
9.17. Size:1326K international rectifier
irfr120pbf irfu120pbf.pdf
PD- 95523A IRFR120PbF IRFU120PbF Lead-Free 12/03/04 Document Number 91266 www.vishay.com 1 IRFR/U120PbF Document Number 91266 www.vishay.com 2 IRFR/U120PbF Document Number 91266 www.vishay.com 3 IRFR/U120PbF Document Number 91266 www.vishay.com 4 IRFR/U120PbF Document Number 91266 www.vishay.com 5 IRFR/U120PbF Document Number 91266 www.vishay.com 6 IRFR/U12
9.18. Size:256K fairchild semi
irfr120a irfu120a.pdf
IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.155 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu
9.19. Size:255K fairchild semi
irfr110a irfu110a.pdf
IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maxim
9.22. Size:2013K vishay
irfr120pbf irfu120pbf sihfr120 sihfu120.pdf
IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Q
9.23. Size:244K vishay
irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing
9.24. Size:1989K vishay
irfr120 irfu120 sihfr120 sihfu120.pdf
IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Q
9.25. Size:1341K vishay
irfu110 sihfu110.pdf
IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 10 V 0.54 Straight Lead Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Qgs (nC) 2.3 Repetitive Avalanche Rated Qgd (nC) 3.8 Fast Switching Configuration Single Ease of Parallel
9.26. Size:1337K vishay
irfu110pbf sihfu110.pdf
IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 10 V 0.54 Straight Lead Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Qgs (nC) 2.3 Repetitive Avalanche Rated Qgd (nC) 3.8 Fast Switching Configuration Single Ease of Parallel
9.27. Size:269K vishay
irfu1n60a sihfr1n60a sihfu1n60a.pdf
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing
9.28. Size:1541K cn vbsemi
irfu120np.pdf
IRFU120NP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 10 V 0.20 Available in Tape and Reel Available Qg (Max.) (nC) 16 Dynamic dV/dt Rating Qgs (nC) 4.4 Repetitive Avalanche Rated Available Qgd (nC) 7.7 175 C Operating Temperature Configuration Single
9.29. Size:811K cn vbsemi
irfu1205pbf.pdf
IRFU1205PBF www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secon
9.30. Size:848K cn vbsemi
irfu110p.pdf
IRFU110P www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 10 V 0.20 Available in Tape and Reel Available Qg (Max.) (nC) 16 Dynamic dV/dt Rating Qgs (nC) 4.4 Repetitive Avalanche Rated Available Qgd (nC) 7.7 175 C Operating Temperature Configuration Single
9.31. Size:261K inchange semiconductor
irfu120z.pdf
isc N-Channel MOSFET Transistor IRFU120Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.32. Size:261K inchange semiconductor
irfu120n.pdf
isc N-Channel MOSFET Transistor IRFU120N FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.33. Size:260K inchange semiconductor
irfu13n15d.pdf
isc N-Channel MOSFET Transistor IRFU13N15D FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
9.34. Size:297K inchange semiconductor
irfu1n60a.pdf
iscN-Channel MOSFET Transistor IRFU1N60A FEATURES Low drain-source on-resistance RDS(ON) =7 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.35. Size:221K inchange semiconductor
irfu18n15d.pdf
isc N-Channel MOSFET Transistor IRFU18N15D FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
9.36. Size:301K inchange semiconductor
irfu120.pdf
isc N-Channel MOSFET Transistor IRFU120 FEATURES Static drain-source on-resistance RDS(on) 0.27 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power factor correction Switched mode power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour
9.37. Size:260K inchange semiconductor
irfu15n20d.pdf
isc N-Channel MOSFET Transistor IRFU15N20D FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
9.38. Size:261K inchange semiconductor
irfu13n20d.pdf
isc N-Channel MOSFET Transistor IRFU13N20D FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
9.39. Size:260K inchange semiconductor
irfu1205.pdf
isc N-Channel MOSFET Transistor IRFU1205 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
Otros transistores... IRFSL4610, IRFSL4615, IRFSL4620, IRFSL5615, IRFSL5620, IRFSL59N10D, IRFTS8342, IRFU1010Z, IRF9540N, IRFU120Z, IRFU13N15D, IRFU13N20D, IRFU15N20D, IRFU18N15D, IRFU220N, IRFU2307Z, IRFU2405
