IRFU2307Z Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFU2307Z 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: IPAK
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IRFU2307Z datasheet
irfr2307zpbf irfu2307zpbf.pdf
PD - 96191B IRFR2307ZPbF IRFU2307ZPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resi
irfu2307z.pdf
isc N-Channel MOSFET Transistor IRFU2307Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
irfu220a irfr220a.pdf
IRFR/U220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ra
irfr220pbf irfu220pbf.pdf
PD - 95069A IRFR220PbF IRFU220PbF Lead-Free 12/14/04 Document Number 91270 www.vishay.com 1 IRFR/U220PbF Document Number 91270 www.vishay.com 2 IRFR/U220PbF Document Number 91270 www.vishay.com 3 IRFR/U220PbF Document Number 91270 www.vishay.com 4 IRFR/U220PbF Document Number 91270 www.vishay.com 5 IRFR/U220PbF Document Number 91270 www.vishay.com 6 IRFR/U2
irfr2905zpbf irfu2905zpbf.pdf
PD - 95943B IRFR2905ZPbF IRFU2905ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 14.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re
irfr2407pbf irfu2407pbf.pdf
PD-95033A IRFR2407PbF IRFU2407PbF Lead-Free www.irf.com 1 12/10/04 IRFR/U2407PbF 2 www.irf.com IRFR/U2407PbF www.irf.com 3 IRFR/U2407PbF 4 www.irf.com IRFR/U2407PbF www.irf.com 5 IRFR/U2407PbF 6 www.irf.com IRFR/U2407PbF www.irf.com 7 IRFR/U2407PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat
irfr2405pbf irfu2405pbf.pdf
PD - 95369A IRFR2405PbF IRFU2405PbF l Surface Mount (IRFR2405) HEXFET Power MOSFET l Straight Lead (IRFU2405) l Advanced Process Technology D VDSS = 55V l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated RDS(on) = 0.016 G l Lead-Free Description ID = 56A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing
irfu2607zpbf.pdf
PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 22m Lead-Free G Description ID = 42A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resist
irfr210pbf irfu210pbf.pdf
PD - 95068A IRFR210PbF IRFU210PbF Lead-Free 12/9/04 Document Number 91268 www.vishay.com 1 IRFR/U210PbF Document Number 91268 www.vishay.com 2 IRFR/U210PbF Document Number 91268 www.vishay.com 3 IRFR/U210PbF Document Number 91268 www.vishay.com 4 IRFR/U210PbF Document Number 91268 www.vishay.com 5 IRFR/U210PbF Document Number 91268 www.vishay.com 6 IRFR/U21
irfr24n15dpbf irfu24n15dpbf.pdf
PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch
irfr224pbf irfu224pbf.pdf
PD- 95237A IRFR224PbF IRFU224PbF Lead-Free 12/03/04 Document Number 91271 www.vishay.com 1 IRFR/U224PbF Document Number 91271 www.vishay.com 2 IRFR/U224PbF Document Number 91271 www.vishay.com 3 IRFR/U224PbF Document Number 91271 www.vishay.com 4 IRFR/U224PbF Document Number 91271 www.vishay.com 5 IRFR/U224PbF Document Number 91271 www.vishay.com 6 IRFR/U22
irfr2607zpbf irfu2607zpbf.pdf
PD - 95953 IRFR2607ZPbF AUTOMOTIVE MOSFET IRFU2607ZPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 22m l Lead-Free G Description ID = 42A Specifically designed for Automotive applications, S this HEXFET Power MOSFET u
irfr2407 irfu2407.pdf
PD -93862 IRFR2407 IRFU2407 HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407) D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.026 G Fully Avalanche Rated Description ID = 42A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremel
irfr214pbf irfu214pbf.pdf
PD- 95384A IRFR214PbF IRFU214PbF Lead-Free 12/3/04 Document Number 91269 www.vishay.com 1 IRFR/U214PbF Document Number 91269 www.vishay.com 2 IRFR/U214PbF Document Number 91269 www.vishay.com 3 IRFR/U214PbF Document Number 91269 www.vishay.com 4 IRFR/U214PbF Document Number 91269 www.vishay.com 5 IRFR/U214PbF Document Number 91269 www.vishay.com 6 IRFR/U214
irfr220npbf irfu220npbf.pdf
PD- 95063A IRFR220NPbF SMPS MOSFET IRFU220NPbF HEXFET Power MOSFET Applications VDSS RDS(on) max (m ) ID l High frequency DC-DC converters 200V 600 5.0A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak l Fully Characterized Avalanche V
irfu220b.pdf
November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to
irfr214b irfu214b.pdf
November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t
irfr210b irfu210b 2.pdf
November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t
irfu214b.pdf
November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t
irfu220.pdf
IRFR220, IRFU220 Data Sheet January 2002 4.6A, 200V, 0.800 Ohm, N-Channel Power Features MOSFETs 4.6A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.800 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval
irfr210b irfu210b.pdf
November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t
irfr220 irfu220 sihfr220 sihfu220 2.pdf
IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Surface Mount (IRFR220/SiHFR220) Qg (Max.) (nC) 14 COMPLIANT Straight Lead (IRFU220/SiHFU220) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 7.9 Configuration Si
irfr220pbf irfu220pbf sihfr220 sihfu220.pdf
IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 200 Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.80 Surface mount (IRFR220, SiHFR220) Straight lead (IRFU220, SiHFU220) Qg (Max.) (nC) 14 Available in tape and reel Qgs (nC) 3.0 Available Fast switching Qgd (nC) 7
irfr224 irfu224 sihfr224 sihfu224.pdf
IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.1 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR224, SiHFR224) Qgs (nC) 2.7 Straight Lead (IRFU224, SiHFU224) Available in Tape and Reel
irfr210pbf irfu210pbf sihfr210 sihfu210.pdf
IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and Reel Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Eas
irfr220 irfu220 sihfr220 sihfu220.pdf
IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.80 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR220, SiHFR220) Qgs (nC) 3.0 Straight Lead (IRFU220, SiHFU220) Qgd (nC) 7.9 Available in T
irfr214 irfu214 sihfr214 sihfu214.pdf
IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 2.0 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210) Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210) Qgd (nC) 4.5 Available
irfr224pbf irfu224pbf sihfr224 sihfu224.pdf
IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 Surface Mount (IRFR224, SiHFR224) Qg (Max.) (nC) 14 Straight Lead (IRFU224, SiHFU224) Qgs (nC) 2.7 Qgd (nC) 7.8 Available in Tape and Reel Configuration Single
irfr210 irfu210 sihfr210 sihfu210.pdf
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.5 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 Available in
irfr214pbf irfu214pbf sihfr214 sihfu214.pdf
IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214) Qg (Max.) (nC) 8.2 Available in Tape and Reel Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Eas
irfu220npbf.pdf
IRFU220NPBF www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.270 at VGS = 10 V 8 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIM
irfu2407.pdf
isc N-Channel MOSFET Transistor IRFU2407 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfu220b.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFU220B FEATURES With TO-251(IPAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications DC-DC converters High freque
irfu224.pdf
iscN-Channel MOSFET Transistor IRFU224 FEATURES Low drain-source on-resistance RDS(ON) 1.1 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
irfu2607z.pdf
isc N-Channel MOSFET Transistor IRFU2607Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
irfu2405.pdf
isc N-Channel MOSFET Transistor IRFU2405 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfu220.pdf
iscN-Channel MOSFET Transistor IRFU220 FEATURES Low drain-source on-resistance RDS(ON) 0.8 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
irfu220n.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFU220N FEATURES With TO-251(IPAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications DC-DC converters High freque
irfu214.pdf
iscN-Channel MOSFET Transistor IRFU214 FEATURES Low drain-source on-resistance RDS(ON) 2.0 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
irfu24n15d.pdf
isc N-Channel MOSFET Transistor IRFU24N15D FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
irfu2905z.pdf
isc N-Channel MOSFET Transistor IRFU2905Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
Otros transistores... IRFU1010Z, IRFU1018E, IRFU120Z, IRFU13N15D, IRFU13N20D, IRFU15N20D, IRFU18N15D, IRFU220N, SPP20N60C3, IRFU2405, IRFU2407, IRFU24N15D, IRFU2607Z, IRFU2905Z, IRFU3410, IRFU3411, IRFU3504Z
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