IRFU3411 Datasheet. Equivalente

 ..1. Size:230K  international rectifier
 irfr3411pbf irfu3411pbf.pdf

PD - 95371A IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to

 ..2. Size:261K  inchange semiconductor
 irfu3411.pdf

isc N-Channel MOSFET Transistor IRFU3411 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 7.1. Size:239K  international rectifier
 irfr3418pbf irfu3418pbf.pdf

PD - 95516A IRFR3418PbF IRFU3418PbF HEXFET Power MOSFET Applications VDSS RDS(on) Max ID l High frequency DC-DC converters l Lead-Free 14m 30A 80V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current

 7.2. Size:231K  international rectifier
 irfr3410pbf irfu3410pbf.pdf

PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m 31A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Cu

 7.3. Size:228K  international rectifier
 irfr3412pbf irfu3412pbf.pdf

PD - 95498A IRFR3412PbF IRFU3412PbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID l Motor Drive 100V 0.025 48A l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D-Pak I-Pak l Fully Cha

 7.4. Size:842K  cn vbsemi
 irfu3410p.pdf

IRFU3410P www.VBsemi.tw www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.036 at VGS = 10 V 35 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View

 7.5. Size:261K  inchange semiconductor
 irfu3410.pdf

isc N-Channel MOSFET Transistor IRFU3410 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN