IRFZ44VZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ44VZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 92 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 57 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 43 nC

Resistencia drenaje-fuente RDS(on): 0.012 Ohm

Empaquetado / Estuche: TO220AB

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IRFZ44VZ Datasheet (PDF)

1.1. irfz44vzl irfz44vzpbf irfz44vzspbf.pdf Size:301K _update

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Ultra Low On-Resistance VDSS = 60V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12mΩ G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET® Power MOSFE

1.2. auirfz44vzstrl.pdf Size:274K _international_rectifier

PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET® Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6mΩ l 175°C Operating Temperature l Fast Switching G max. 12mΩ l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automo

1.3. irfz44vzs.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRFZ44VZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

1.4. irfz44vz.pdf Size:245K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44VZ，IIRFZ44VZ ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

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