IRFZ44Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFZ44Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 51 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 29 nC
   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0139 Ohm
   Paquete / Cubierta: TO220AB

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IRFZ44Z Datasheet (PDF)

..1. Size:382K international rectifier
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PD - 95379AIRFZ44ZPbFIRFZ44ZSPbFFeatures Advanced Process TechnologyIRFZ44ZLPbF Ultra Low On-ResistanceHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating TemperatureD Fast SwitchingVDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 13.9mGDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

..2. Size:382K infineon
irfz44zpbf irfz44zspbf irfz44zlpbf.pdf

..3. Size:246K inchange semiconductor
irfz44z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ZIIRFZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.1. Size:327K international rectifier
auirfz44zstrl.pdf

PD - 97543AUIRFZ44ZAUTOMOTIVE GRADEAUIRFZ44ZSFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.13.9mTjmaxG Lead-Free, RoHS CompliantID51AS Automotive Qualified *DDescriptionDSpecifically

0.2. Size:713K infineon
auirfz44z auirfz44zs.pdf

AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 13.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 51A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed

0.3. Size:258K inchange semiconductor
irfz44zs.pdf

Isc N-Channel MOSFET Transistor IRFZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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