IRFZ44Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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IRFZ44Z Datasheet (PDF)

1.1. irfz44zlpbf irfz44zpbf irfz44zspbf.pdf Size:382K _update

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET® Power MOSFET Dynamic dv/dt Rating 175°C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9mΩ G Description ID = 51A S This HEXFET® Power MOSFET utilizes the latest processing techniqu

4.1. irfz44n.pdf Size:100K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor

4.2. irfz44r irfz44rpbf.pdf Size:1289K _update

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 18 • Fully Avalanche Rated Qgd (nC) 25 • Drop in Replacement of the

 4.3. irfz44vzl irfz44vzpbf irfz44vzspbf.pdf Size:301K _update

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Ultra Low On-Resistance VDSS = 60V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12mΩ G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET® Power MOSFE

4.4. irfz44epbf.pdf Size:150K _update

PD - 94822 IRFZ44EPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 0.023Ω Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

 4.5. irfz44npbf.pdf Size:226K _update

PD - 94787B IRFZ44NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 17.5mΩ l Fully Avalanche Rated G l Lead-Free ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

4.6. irfz44pbf.pdf Size:1542K _update

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.028 RoHS* • Fast Switching Qg (Max.) (nC) 67 COMPLIANT • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

4.7. irfz44espbf.pdf Size:234K _update

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET® Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175°C Operating Temperature RDS(on) = 0.023Ω l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

4.8. irfz44vpbf.pdf Size:226K _update

PD - 94826A IRFZ44VPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced pro

4.9. irfz44l irfz44s irfz44spbf.pdf Size:815K _update

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.028 • Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature Qgs (nC) 18 • Fast S

4.10. irfz44nlpbf irfz44nspbf.pdf Size:334K _update

 IRFZ44NSPbF l IRFZ44NLPbF l ® l l D DSS l l l DS(on) Ω Description G ® D

4.11. irfz44n 1.pdf Size:52K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V �trench� technology. The device ID Drain current (DC) 49 A features very low on-state re

4.12. irfz44ns 1.pdf Size:57K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using �trench� ID Drain current (DC) 49 A technology. The device features ve

4.13. irfz44n.pdf Size:100K _international_rectifier

PD - 94053 IRFZ44N HEXFET� Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET� Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.14. irfz44ns.pdf Size:151K _international_rectifier

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET� Power MOSFET Low-profile through-hole (IRFZ44NL) D 175�C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET� Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely

4.15. irfz44n 1.pdf Size:52K _international_rectifier

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V �trench� technology. The device ID Drain current (DC) 49 A features very low on-state re

4.16. irfz44s.pdf Size:325K _international_rectifier

PD - 9.893A IRFZ44S/L HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175�C Operating Temperature RDS(on) = 0.028? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

4.17. irfz44vs.pdf Size:145K _international_rectifier

PD - 94050A IRFZ44VS IRFZ44VL HEXFET� Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175�C Operating Temperature Fast Switching RDS(on) = 16.5m? Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET� Power MOSFETs from International Rectifier utilize advanced processing techniques

4.18. irfz44ns 1.pdf Size:57K _international_rectifier

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using �trench� ID Drain current (DC) 49 A technology. The device features ve

4.19. irfz44.pdf Size:859K _international_rectifier

PD - 94943 IRFZ44PbF � Lead-Free 01/14/04 Document Number: 91291 www.vishay.com 1 IRFZ44PbF Document Number: 91291 www.vishay.com 2 IRFZ44PbF Document Number: 91291 www.vishay.com 3 IRFZ44PbF Document Number: 91291 www.vishay.com 4 IRFZ44PbF Document Number: 91291 www.vishay.com 5 IRFZ44PbF Document Number: 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline Dime

4.20. irfz44es.pdf Size:163K _international_rectifier

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175�C Operating Temperature RDS(on) = 0.023? G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

4.21. irfz44e.pdf Size:96K _international_rectifier

PD - 91671B IRFZ44E HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175�C Operating Temperature Fast Switching RDS(on) = 0.023? G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, comb

4.22. irfz44rpbf.pdf Size:221K _international_rectifier

PD - 94823 IRFZ44RPbF HEXFET� Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175�C Operating Temperature l Fast Switching RDS(on) = 0.028? G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET� Power MOSFETs from International Rect

4.23. irfz44r.pdf Size:153K _international_rectifier

PD - 93956 IRFZ44R HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 0.028? G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET� Power MOSFETs from International Rectifier utilize advanced

4.24. irfz44v.pdf Size:229K _international_rectifier

PD - 93957A IRFZ44V HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET� Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

4.25. irfz44a.pdf Size:503K _samsung

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 �A (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb

4.26. irfz44s irfz44l sihfz44s sihfz44l.pdf Size:790K _vishay

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 � Advanced Process Technology RDS(on) (?)VGS = 10 V 0.028 � Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 � Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) � 175 �C Operating Temperature Qgs (nC) 18 � Fast Switching Qgd (nC)

4.27. irfz44 sihfz44.pdf Size:1540K _vishay

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 60 Available � 175 �C Operating Temperature RDS(on) (?)VGS = 10 V 0.028 RoHS* � Fast Switching Qg (Max.) (nC) 67 COMPLIANT � Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 � Simple Drive Requirements Configuration Single � Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thir

4.28. irfz44r sihfz44r.pdf Size:1287K _vishay

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Advanced Process Technology VDS (V) 60 Available � Ultra Low On-Resistance RDS(on) (?)VGS = 10 V 0.028 RoHS* � Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 � 175 �C Operating Temperature � Fast Switching Qgs (nC) 18 � Fully Avalanche Rated Qgd (nC) 25 � Drop in Replacement of the IRFZ44, SiHFZ44 for

4.29. irfz44n.pdf Size:145K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor contro

4.30. irfz44cn.pdf Size:145K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor contr

4.31. lirfz44n.pdf Size:252K _lrc

LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10

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