IRFZ46Z Todos los transistores

 

IRFZ46Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ46Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 82 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 51 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 31 nC

Resistencia drenaje-fuente RDS(on): 0.0136 Ohm

Empaquetado / Estuche: TO220AB

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IRFZ46Z Datasheet (PDF)

1.1. irfz46zlpbf irfz46zpbf irfz46zspbf.pdf Size:375K _update

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PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features IRFZ46ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 13.6mΩ G Lead-Free Description ID = 51A S This HEXFET® Power MOSFET utilizes the latest processing techniqu

4.1. irfz46.pdf Size:105K _update

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IRFZ46Z



4.2. irfz46nlpbf.pdf Size:679K _update

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PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t

 4.3. irfz46npbf.pdf Size:215K _update

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PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

4.4. irfz46l.pdf Size:333K _update

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IRFZ46Z

PD - 9.922A IRFZ46S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175°C Operating Temperature RDS(on) = 0.024Ω Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

 4.5. irfz46s.pdf Size:358K _international_rectifier

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IRFZ46Z

PD - 9.922A IRFZ46S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175C Operating Temperature RDS(on) = 0.024? Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

4.6. irfz46.pdf Size:154K _international_rectifier

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IRFZ46Z

Document Number: 90372 www.vishay.com 1283 Document Number: 90372 www.vishay.com 1284 Document Number: 90372 www.vishay.com 1285 Document Number: 90372 www.vishay.com 1286 Document Number: 90372 www.vishay.com 1287 Document Number: 90372 www.vishay.com 1288 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as par

4.7. irfz46n.pdf Size:85K _international_rectifier

IRFZ46Z
IRFZ46Z

PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5m? G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

4.8. irfz46ns.pdf Size:149K _international_rectifier

IRFZ46Z
IRFZ46Z

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.0165? Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extr

Otros transistores... IRFZ44V , IRFZ44VL , IRFZ44VS , IRFZ44VZ , IRFZ44VZS , IRFZ44Z , IRFZ44ZL , IRFZ44ZS , SPA11N60C3 , IRFZ46ZL , IRFZ46ZS , IRFZ48V , IRFZ48VS , IRFZ48Z , IRFZ48ZL , IRFZ48ZS , IRL1404 .

 
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