IRFZ48Z Todos los transistores

PD - 95574A IRFZ48ZPbF IRFZ48ZSPbF IRFZ48ZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 11m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 61A S Description This HEXFET Power MOSFET utilizes the latest processing techniques

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48Z IIRFZ48Z FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

PD - 97612A AUTOMOTIVE GRADE AUIRFZ48Z AUIRFZ48ZS Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature V(BR)DSS 55V l Fast Switching l Repetitive Avalanche Allowed up RDS(on) max. 11m G to Tjmax l Lead-Free, RoHS Compliant ID 61A S l Automotive Qualified * Description Specifically designed for Automot

PD - 97612A AUTOMOTIVE GRADE AUIRFZ48Z AUIRFZ48ZS Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature V(BR)DSS 55V l Fast Switching l Repetitive Avalanche Allowed up RDS(on) max. 11m G to Tjmax l Lead-Free, RoHS Compliant ID 61A S l Automotive Qualified * Description Specifically designed for Automot

Isc N-Channel MOSFET Transistor IRFZ48ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt