IRFZ48ZS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95574AIRFZ48ZPbFIRFZ48ZSPbFIRFZ48ZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 61ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques

Isc N-Channel MOSFET Transistor IRFZ48ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

PD - 97612AAUTOMOTIVE GRADEAUIRFZ48ZAUIRFZ48ZSFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureV(BR)DSS55Vl Fast Switchingl Repetitive Avalanche Allowed upRDS(on) max.11mGto Tjmaxl Lead-Free, RoHS CompliantID61ASl Automotive Qualified *DescriptionSpecifically designed for Automot

PD - 97612AAUTOMOTIVE GRADEAUIRFZ48ZAUIRFZ48ZSFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureV(BR)DSS55Vl Fast Switchingl Repetitive Avalanche Allowed upRDS(on) max.11mGto Tjmaxl Lead-Free, RoHS CompliantID61ASl Automotive Qualified *DescriptionSpecifically designed for Automot

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48Z IIRFZ48ZFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R