IRFZ48ZS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ48ZS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 91 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 61 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 43 nC
Resistencia drenaje-fuente RDS(on): 0.011 Ohm
Empaquetado / Estuche: D2PAK
Búsqueda de reemplazo de MOSFET IRFZ48ZS
IRFZ48ZS Datasheet (PDF)
1.1. irfz48zlpbf irfz48zpbf irfz48zspbf.pdf 
Size:376K _update
PD - 95574A IRFZ48ZPbF IRFZ48ZSPbF IRFZ48ZLPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 11mΩ Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 61A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques
4.1. irfz48vspbf.pdf Size:179K _update
PD - 95573 IRFZ48VSPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 12mΩ G l Fully Avalanche Rated l Optimized for SMPS Applications ID = 72A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proc
4.2. irfz48 irfz48pbf.pdf Size:1517K _update
IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.018 RoHS* • Ultra Low On-Resistance COMPLIANT Qg (Max.) (nC) 110 • Very Low Thermal Resistance Qgs (nC) 29 • 175 °C Operating Temperature Qgd (nC) 36 • Fast Switching Configuration Single • E
4.3. irfz48rl irfz48rlpbf irfz48rs irfz48rspbf.pdf Size:228K _update
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 10 V 0.018 • Dynamic dV/dt Qg (Max.) (nC) 110 • 175 °C Operating Temperature Qgs (nC) 29 • Fast Switching Qgd (nC) 36 • Fully Avalanche Rated Configuration Si
4.4. irfz48npbf.pdf Size:226K _update
PD - 94991B IRFZ48NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 14mΩ G l Fully Avalanche Rated l Lead-Free ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr
4.5. irfz48l irfz48s.pdf Size:377K _update
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 10 V 0.018 • Surface Mount (IRFZ48S, SiHFZ48S) Qg (Max.) (nC) 110 • Low-Profile Through-Hole (IRFZ48L, SiHFZ48L) Qgs (nC) 29 • 175 °C Operating Temperature Qgd (nC)
4.6. irfz48r irfz48rpbf.pdf Size:1061K _update
IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (Ω)VGS = 10 V 0.018 • Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 29 • Fully Avalanche Rated Qgd (nC) 36 • Drop in Replacement of the SiH
4.7. irfz48nlpbf.pdf Size:301K _update
IRFZ48NSPbF IRFZ48NLPbF l Advanced Process Technology l Surface Mount (IRFZ48NS) HEXFET® Power MOSFET l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.014Ω Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S
4.8. irfz48n 1.pdf Size:53K _philips
Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re
4.9. irfz48r.pdf Size:136K _international_rectifier
PD - 93958 IRFZ48R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.018? G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ48 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced
4.10. irfz48n.pdf Size:102K _international_rectifier
PD - 91406 IRFZ48N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 14m? Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil
4.11. irfz48pbf.pdf Size:2033K _international_rectifier
PD - 94956 IRFZ48PbF Lead-Free 1/29/04 Document Number: 91294 www.vishay.com 1 IRFZ48PbF Document Number: 91294 www.vishay.com 2 IRFZ48PbF Document Number: 91294 www.vishay.com 3 IRFZ48PbF Document Number: 91294 www.vishay.com 4 IRFZ48PbF Document Number: 91294 www.vishay.com 5 IRFZ48PbF Document Number: 91294 www.vishay.com 6 IRFZ48PbF TO-220AB Package Outline Dimen
4.12. irfz48n 1.pdf Size:53K _international_rectifier
Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re
4.13. irfz48s.pdf Size:319K _international_rectifier
PD - 9.894A IRFZ48S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175C Operating Temperature RDS(on) = 0.018? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
4.14. irfz48vs.pdf Size:282K _international_rectifier
PD - 94051A IRFZ48VS HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e
4.15. irfz48v.pdf Size:111K _international_rectifier
PD - 93959A IRFZ48V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 72A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e
4.16. irfz48.pdf Size:175K _international_rectifier
4.17. irfz48rspbf irfz48rlpbf.pdf Size:262K _international_rectifier
PD - 95761 IRFZ48RSPbF IRFZ48RLPbF l Advanced Process Technology HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.018? l Drop in Replacement of the IRFZ48 G for Linear/Audio Applications ID = 50*A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize
4.18. irfz48ns.pdf Size:131K _international_rectifier
PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014? Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achieve extre
4.19. irfz48s-l.pdf Size:192K _international_rectifier
PD - 9.894A IRFZ48S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175C Operating Temperature RDS(on) = 0.018? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
4.20. irfz48r sihfz48r.pdf Size:1059K _vishay
IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) (?)VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiHFZ48 for Linear/Aud
4.21. irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf Size:203K _vishay
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) (?)VGS = 10 V 0.018 Dynamic dV/dt Qg (Max.) (nC) 110 175 C Operating Temperature Qgs (nC) 29 Fast Switching Qgd (nC) 36 Fully Avalanche Rated Configuration Single Drop in Re
4.22. irfz48n.pdf Size:144K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014?(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta
Otros transistores... IRFZ44ZS , IRFZ46Z , IRFZ46ZL , IRFZ46ZS , IRFZ48V , IRFZ48VS , IRFZ48Z , IRFZ48ZL , IRF9540N , IRL1404 , IRL1404L , IRL1404S , IRL1404Z , IRL1404ZL , IRL1404ZS , IRL3705Z , IRL3705ZL .
