IRL1404S Todos los transistores

 

IRL1404S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL1404S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 160 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 93.3 nC

Tiempo de elevación (tr): 270 nS

Resistencia drenaje-fuente RDS(on): 0.004 Ohm

Empaquetado / Estuche: D2PAK

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IRL1404S Datasheet (PDF)

1.1. irl1404lpbf irl1404spbf.pdf Size:646K _upd

IRL1404S
IRL1404S

PD - 95148 IRL1404SPbF IRL1404LPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche Rated RDS(on) = 0.004Ω Lead-Free G Description ID = 160A Seventh Generation HEXFET® power MOSFETs from S International Rectifier utilize advanced processing techniqu

1.2. irl1404s.pdf Size:133K _international_rectifier

IRL1404S
IRL1404S

PD - 93854A IRL1404S IRL1404L Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 40V 175C Operating Temperature Fast Switching RDS(on) = 0.004? Fully Avalanche Rated G Description Seventh Generation HEXFET power MOSFETs from ID = 160A International Rectifier utilize advanced processing S techniques to achieve extremely

 3.1. irl1404zpbf irl1404zspbf irl1404zlpbf.pdf Size:281K _upd

IRL1404S
IRL1404S

PD - 95446B IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF Features l Logic Level HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 40V l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.1mΩ l Lead-Free G ID = 120A S Description This HEXFET® Power MOSFET utilizes the latest processing techniqu

3.2. irl1404pbf.pdf Size:213K _upd

IRL1404S
IRL1404S

PD - 95588A IRL1404PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 4.0mΩ G l Fast Switching l Fully Avalanche Rated ID = 160A† l Lead-Free S Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to

 3.3. irl1404l.pdf Size:133K _international_rectifier

IRL1404S
IRL1404S

PD - 93854A IRL1404S IRL1404L Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 40V 175°C Operating Temperature Fast Switching RDS(on) = 0.004Ω Fully Avalanche Rated G Description Seventh Generation HEXFET® power MOSFETs from ID = 160A International Rectifier utilize advanced processing S techniques to achieve e

3.4. irl1404.pdf Size:102K _international_rectifier

IRL1404S
IRL1404S

PD -93854 IRL1404 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 160A S Description Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis

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