IRL3713S Todos los transistores

 

IRL3713S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3713S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 200 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 75 nC

Resistencia drenaje-fuente RDS(on): 0.003 Ohm

Empaquetado / Estuche: D2PAK

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IRL3713S Datasheet (PDF)

1.1. irl3713pbf irl3713spbf irl3713lpbf.pdf Size:721K _upd

IRL3713S
IRL3713S

PD - 97011B IRL3713PbF SMPS MOSFET IRL3713SPbF IRL3713LPbF Applications HEXFET® Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max (mW) ID for Telecom and Industrial Use 30V 3.0@VGS = 10V 260A† l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low Gate Impedance l

1.2. irl3713 irl3713l irl3713s.pdf Size:239K _upd

IRL3713S
IRL3713S

PD - 94184D IRL3713 SMPS MOSFET IRL3713S IRL3713L Applications HEXFET® Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max (mW) ID for Telecom and Industrial Use 30V 3.0@VGS = 10V 260A† l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at

 3.1. irl3713.pdf Size:176K _international_rectifier

IRL3713S
IRL3713S

PD - 94184C IRL3713 SMPS MOSFET IRL3713S IRL3713L HEXFET Power MOSFET Applications ?) VDSS RDS(on) max (m?) ID ?) ?) ?) High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 3.0@VGS = 10V 260A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fu

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