IRL6342 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL6342

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 9.9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.1 V

Tiempo de elevación (tr): 12 nS

Resistencia drenaje-fuente RDS(on): 0.0146 Ohm

Empaquetado / Estuche: SO8

Búsqueda de reemplazo de MOSFET IRL6342

IRL6342 Datasheet (PDF)

1.1. irl6342pbf.pdf Size:267K _upd

PD - 97617 IRL6342PbF HEXFET® Power MOSFET VDS 30 V VGS ±12 V RDS(on) max 14.6 mΩ (@VGS = 4.5V) Qg (typical) 11 nC SO-8 ID 9.9 A (@TA = 25°C) Applications • Battery operated DC motor inverter MOSFET • System/Load Switch Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no

1.2. irl6342pbf.pdf Size:267K _international_rectifier

5.1. irl630pbf.pdf Size:2205K _upd

IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 V Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 5 V 0.40 RoHS* • Logic Level Gate Drive COMPLIANT Qg (Max.) (nC) 40 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 5.5 • 150 °C Operating Temperature Qgd (nC) 24 • Fast Switching Configuration Sing

5.2. irl630spbf.pdf Size:244K _upd

IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 • Surface Mount RDS(on) ()VGS = 5 V 0.40 • Available in Tape and Reel Qg (Max.) (nC) 40 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 5.5 • Logic-Level Gate Drive Qgd (nC) 24 • RDS(on) Specified at VGS = 4 V a

5.3. irl630s.pdf Size:168K _international_rectifier

PD - 9.1254 IRL630S HEXFET� Power MOSFET Surface Mount Available in Tape & Reel VDSS = 200V Dynamic dv/dt Rating Repetitive Avalanche Rated RDS(on) = 0.40? Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V 150�C Operating Temperature ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, r

5.4. irl630pbf.pdf Size:1360K _international_rectifier

PD- 95756 IRL630PbF � Lead-Free 8/24/04 Document Number: 91303 www.vishay.com 1 IRL630PbF Document Number: 91303 www.vishay.com 2 IRL630PbF Document Number: 91303 www.vishay.com 3 IRL630PbF Document Number: 91303 www.vishay.com 4 IRL630PbF Document Number: 91303 www.vishay.com 5 IRL630PbF Document Number: 91303 www.vishay.com 6 IRL630PbF Document Number: 91303 www.visha

5.5. irl630.pdf Size:150K _international_rectifier

PD -9.1255 IRL630 HEXFET� Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V RDS(on) = 0.40? 150�C Operating Temperature Fast Switching Ease of paralleling ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedi

5.6. irl630a.pdf Size:911K _samsung

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive ? RDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area � Lower Leakage Current : 10 A (Max.) @ VDS = 200V ? Lower RDS(ON) : 0.335 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

5.7. irlz1x irlz2x irlz3x irlz4x irl51x irl52x irl53x irl54x irl61x irl62x irl63x irl64x.pdf Size:18K _samsung

5.8. irl630s sihl630s.pdf Size:218K _vishay

IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 � Surface Mount RDS(on) (?)VGS = 5 V 0.40 � Available in Tape and Reel Qg (Max.) (nC) 40 � Dynamic dV/dt Rating � Repetitive Avalanche Rated Qgs (nC) 5.5 � Logic-Level Gate Drive Qgd (nC) 24 � RDS(on) Specified at VGS = 4 V and 5 V � 150 �C Op

Otros transistores... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

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