IRL6342 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL6342
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.5 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 9.9 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1.1 V
Tiempo de elevación (tr): 12 nS
Resistencia drenaje-fuente RDS(on): 0.0146 Ohm
Empaquetado / Estuche: SO8
Búsqueda de reemplazo de MOSFET IRL6342
IRL6342 Datasheet (PDF)
1.1. irl6342pbf.pdf 
Size:267K _upd
PD - 97617 IRL6342PbF HEXFET® Power MOSFET VDS 30 V VGS ±12 V RDS(on) max 14.6 mΩ (@VGS = 4.5V) Qg (typical) 11 nC SO-8 ID 9.9 A (@TA = 25°C) Applications • Battery operated DC motor inverter MOSFET • System/Load Switch Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no
1.2. irl6342pbf.pdf Size:267K _international_rectifier
PD - 97617 IRL6342PbF HEXFET® Power MOSFET VDS 30 V VGS ±12 V RDS(on) max 14.6 mΩ (@VGS = 4.5V) Qg (typical) 11 nC SO-8 ID 9.9 A (@TA = 25°C) Applications • Battery operated DC motor inverter MOSFET • System/Load Switch Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no
5.1. irl630pbf.pdf Size:2205K _upd
IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 V Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 5 V 0.40 RoHS* • Logic Level Gate Drive COMPLIANT Qg (Max.) (nC) 40 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 5.5 • 150 °C Operating Temperature Qgd (nC) 24 • Fast Switching Configuration Sing
5.2. irl630spbf.pdf Size:244K _upd
IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 • Surface Mount RDS(on) ()VGS = 5 V 0.40 • Available in Tape and Reel Qg (Max.) (nC) 40 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 5.5 • Logic-Level Gate Drive Qgd (nC) 24 • RDS(on) Specified at VGS = 4 V a
5.3. irl630s.pdf Size:168K _international_rectifier
PD - 9.1254 IRL630S HEXFET Power MOSFET Surface Mount Available in Tape & Reel VDSS = 200V Dynamic dv/dt Rating Repetitive Avalanche Rated RDS(on) = 0.40? Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V 150C Operating Temperature ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, r
5.4. irl630pbf.pdf Size:1360K _international_rectifier
PD- 95756 IRL630PbF Lead-Free 8/24/04 Document Number: 91303 www.vishay.com 1 IRL630PbF Document Number: 91303 www.vishay.com 2 IRL630PbF Document Number: 91303 www.vishay.com 3 IRL630PbF Document Number: 91303 www.vishay.com 4 IRL630PbF Document Number: 91303 www.vishay.com 5 IRL630PbF Document Number: 91303 www.vishay.com 6 IRL630PbF Document Number: 91303 www.visha
5.5. irl630.pdf Size:150K _international_rectifier
PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V RDS(on) = 0.40? 150C Operating Temperature Fast Switching Ease of paralleling ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedi
5.6. irl630a.pdf Size:911K _samsung
Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive ? RDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V ? Lower RDS(ON) : 0.335 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol
5.7. irlz1x irlz2x irlz3x irlz4x irl51x irl52x irl53x irl54x irl61x irl62x irl63x irl64x.pdf Size:18K _samsung
5.8. irl630s sihl630s.pdf Size:218K _vishay
IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) (?)VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 5.5 Logic-Level Gate Drive Qgd (nC) 24 RDS(on) Specified at VGS = 4 V and 5 V 150 C Op
Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .
