IRL8113 Todos los transistores

 

IRL8113 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL8113

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 110 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 105 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.25 V

Carga de compuerta (Qg): 23 nC

Resistencia drenaje-fuente RDS(on): 0.006 Ohm

Empaquetado / Estuche: TO220AB

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IRL8113 Datasheet (PDF)

1.1. irl8113lpbf irl8113spbf irl8113pbf.pdf Size:279K _international_rectifier

IRL8113
IRL8113

PD - 95582 IRL8113PbF IRL8113SPbF IRL8113LPbF Applications HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg (Typ.) l Lead-Free 30V 6.0m 23nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRL8113 IRL8113S IRL8113L Absolute Maximum

1.2. irl8113.pdf Size:245K _inchange_semiconductor

IRL8113
IRL8113

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL8113,IIRL8113 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

 4.1. irl8114pbf.pdf Size:423K _international_rectifier

IRL8113
IRL8113

IRL8114PbF HEXFET® Power MOSFET Application  Optimized for UPS/Inverter Applications VDSS 30V D  Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5m G Benefits ID (Silicon Limited) 120A  Low RDS(on) at 4.5V VGS S  Low Gate Charge ID (Package Limited) 90A  Fully Characterized Capacitance and Avalanche SOA  Lead-Free

4.2. irl8114.pdf Size:246K _inchange_semiconductor

IRL8113
IRL8113

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL8114,IIRL8114 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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