IRLB8748 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLB8748
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 92 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.35 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 96 nS
   Cossⓘ - Capacitancia de salida: 464 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRLB8748

IRLB8748 Datasheet (PDF)

..1. Size:264K international rectifier
irlb8748pbf.pdf

PD - 96231IRLB8748PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 4.8m 15nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRLB87

..2. Size:264K infineon
irlb8748pbf.pdf

..3. Size:246K inchange semiconductor
irlb8748.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8748IIRLB8748FEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

7.1. Size:266K international rectifier
irlb8743pbf.pdf

PD - 96232IRLB8743PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous Buck30V 3.2m 36nCConverters for Computer Processor Powerl High Frequency Isolated DC-DCD Converters with Synchronous Rectification for Telecom and Industrial useSDGBenefitsTO-220ABl Very Low RDS(on) at 4.5V VGS IRL

7.2. Size:246K inchange semiconductor
irlb8743.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8743IIRLB8743FEATURESStatic drain-source on-resistance:RDS(on) 3.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

8.1. Size:267K international rectifier
irlb8721pbf.pdf

PD - 97390IRLB8721PbFApplicationsHEXFET Power MOSFETl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) max Qg (typ.)l High Frequency Synchronous BuckConverters for Computer Processor Power 30V 8.7m @VGS = 10V 7.6nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial UseBenefitsSDl Very Low RDS(on) at 4.5V VGSG

8.2. Size:267K infineon
irlb8721pbf.pdf

8.3. Size:2134K cn vbsemi
irlb8721p.pdf

IRLB8721Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewAB

8.4. Size:246K inchange semiconductor
irlb8721.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB8721IIRLB8721FEATURESStatic drain-source on-resistance:RDS(on) 8.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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