IRLML0060 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLML0060
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua
de drenaje: 2.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 6.3 nS
Cossⓘ - Capacitancia de salida: 37 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.092 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de IRLML0060 MOSFET
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IRLML0060 datasheet
..1. Size:218K international rectifier
irlml0060pbf.pdf 
PD - 97439A IRLML0060TRPbF HEXFET Power MOSFET VDS 60 V VGS Max 16 V RDS(on) max 92 m (@VGS = 10V) RDS(on) max Micro3TM (SOT-23) 116 m IRLML0060TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easie
..2. Size:422K huashuo
irlml0060.pdf 
IRLML0060 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The IRLML0060 is the high cell density trenched N- ch MOSFETs, which provides excellent RDSON RDS(ON),typ 80 m and efficiency for most of the small power switching and load switch applications. ID 3 A The IRLML0060 meet the RoHS and Green Product requirement with full function reliability a
0.1. Size:199K international rectifier
irlml0060trpbf.pdf 
PD - 97439A IRLML0060TRPbF HEXFET Power MOSFET VDS 60 V VGS Max 16 V RDS(on) max 92 m (@VGS = 10V) RDS(on) max Micro3TM (SOT-23) 116 m IRLML0060TRPbF (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easie
0.2. Size:907K cn vbsemi
irlml0060trpbf.pdf 
IRLML0060TRPBF www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23
7.1. Size:200K international rectifier
irlml0030pbf.pdf 
PD - 96278B IRLML0030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max 20 V G 1 RDS(on) max 27 m 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 m (@VGS = 4.5V) IRLML0030TRPbF Application(s) Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( 27m ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compati
7.2. Size:201K international rectifier
irlml0040pbf.pdf 
PD - 96309A IRLML0040TRPbF HEXFET Power MOSFET VDSS V 40 VGS Max 16 V G 1 RDS(on) max 56 m (@VGS = 10V) 3 D RDS(on) max 78 m S 2 Micro3TM (SOT-23) (@VGS = 4.5V) IRLML0040TRPbF Application(s) Load/ System Switch DC Motor Drive Features and Benefits Benefits Features Low RDS(on) ( 56m ) Lower switching losses Industry-standard pinout Multi-vend
7.3. Size:207K international rectifier
irlml0030pbf-1.pdf 
IRLML0030PbF-1 HEXFET Power MOSFET VDS 30 V VGS Max 20 V G 1 RDS(on) max 27 m 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 m (@VGS = 4.5V) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier M
7.4. Size:191K international rectifier
irlml0030trpbf.pdf 
PD - 96278B IRLML0030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max 20 V G 1 RDS(on) max 27 m 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 m (@VGS = 4.5V) IRLML0030TRPbF Application(s) Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( 27m ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compati
7.5. Size:192K international rectifier
irlml0040trpbf.pdf 
PD - 96309A IRLML0040TRPbF HEXFET Power MOSFET VDSS V 40 VGS Max 16 V G 1 RDS(on) max 56 m (@VGS = 10V) 3 D RDS(on) max 78 m S 2 Micro3TM (SOT-23) (@VGS = 4.5V) IRLML0040TRPbF Application(s) Load/ System Switch DC Motor Drive Features and Benefits Benefits Features Low RDS(on) ( 56m ) Lower switching losses Industry-standard pinout Multi-vend
7.6. Size:162K tysemi
irlml0030trpbf.pdf 
Product specification IRLML0030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max 20 V G 1 RDS(on) max 27 m 3 D (@VGS = 10V) RDS(on) max S 2 Micro3TM (SOT-23) 40 m (@VGS = 4.5V) IRLML0030TRPbF Application(s) Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( 27m ) Lower switching losses Industry-standard pinout Multi-vendor compatibilit
7.7. Size:168K tysemi
irlml0040trpbf.pdf 
Product specification IRLML0040TRPbF HEXFET Power MOSFET VDSS V 40 VGS Max 16 V G 1 RDS(on) max 56 m (@VGS = 10V) 3 D RDS(on) max 78 m S 2 Micro3TM (SOT-23) (@VGS = 4.5V) IRLML0040TRPbF Application(s) Load/ System Switch DC Motor Drive Features and Benefits Benefits Features Low RDS(on) ( 56m ) Lower switching losses Industry-standard pinout
7.8. Size:1508K cn vbsemi
irlml0030tr.pdf 
IRLML0030TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)
7.9. Size:893K cn vbsemi
irlml0040trpbf.pdf 
IRLML0040TRPBF www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-
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History: IRL8113S
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