IRLR8259 Todos los transistores

 ..1. Size:363K  international rectifier
 irlu8259pbf irlr8259pbf.pdf

PD - 97360 IRLR8259PbF IRLU8259PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial Use D Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully

 ..2. Size:361K  international rectifier
 irlr8259pbf irlu8259pbf.pdf

PD - 97360 IRLR8259PbF IRLU8259PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial Use D Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully

 ..3. Size:242K  inchange semiconductor
 irlr8259.pdf

isc N-Channel MOSFET Transistor IRLR8259, IIRLR8259 FEATURES Static drain-source on-resistance RDS(on) 8.7m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 7.1. Size:284K  international rectifier
 irlr8256pbf.pdf

PD - 96208A IRLR8256PbF IRLU8256PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial Use D Benefits l Very Low RDS(on) at 4.5V VGS S S l Ultra-Low Gate Impedance D G G l Fully Char

 7.2. Size:284K  international rectifier
 irlu8256pbf irlr8256pbf.pdf

PD - 96208A IRLR8256PbF IRLU8256PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial Use D Benefits l Very Low RDS(on) at 4.5V VGS S S l Ultra-Low Gate Impedance D G G l Fully Char

 7.3. Size:242K  inchange semiconductor
 irlr8256.pdf

isc N-Channel MOSFET Transistor IRLR8256, IIRLR8256 FEATURES Static drain-source on-resistance RDS(on) 5.7m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High efficiency ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 25 V DSS V Gat