IRLR8721 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR8721
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de IRLR8721 MOSFET
- Selecciónⓘ de transistores por parámetros
IRLR8721 datasheet
irlu8721pbf irlr8721pbf.pdf
IRLR8721PbF IRLU8721PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 30V 8.4m 8.5nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use l Lead-Free S S D G G Benefits D-Pak l Very Low RDS(on) at 4.5V VGS I-Pak IRLR8721PbF IRLU8721PbF
irlr8721.pdf
isc N-Channel MOSFET Transistor IRLR8721, IIRLR8721 FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
irlr8721pbf-1.pdf
IRLR8721PbF-1 HEXFET Power MOSFET VDS 30 V D D RDS(on) max 8.4 m (@V = 10V) GS S G Qg (typical) 8.5 nC G ID 65 A D-Pak S (@T = 25 C) C IRLR8721PbF-1 Features Benefits Industry-standard pinout D-Pak Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Indu
irlu8726pbf irlr8726pbf.pdf
PD - 97146A IRLR8726PbF IRLU8726PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg (typ.) Converters for Computer Processor Power 30V 5.8m @VGS = 10V 15nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D D for Telecom and Industrial Use Benefits S l Very Low RDS(on) at 4.5V VGS S D D G l Ultra-Low Gate I
Otros transistores... IRLR7821 , IRLR7821C , IRLR7833 , IRLR7843 , IRLR8103V , IRLR8113 , IRLR8256 , IRLR8259 , BS170 , IRLR8726 , IRLR8729 , IRLR8743 , IRLS3034 , IRLS3034-7P , IRLS3036 , IRLS3036-7P , IRLS4030 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E | ASD65R350E | ASD65R300E | ASD65R280E | ASD65R270E | ASD60R330E | ASD60R280E | ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E
Popular searches
2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor | 2sc828 equivalent
