IRLR8721 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR8721
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de IRLR8721 MOSFET
IRLR8721 Datasheet (PDF)
irlu8721pbf irlr8721pbf.pdf

IRLR8721PbFIRLU8721PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 8.4m 8.5nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial Usel Lead-FreeS SDG GBenefitsD-Pakl Very Low RDS(on) at 4.5V VGS I-PakIRLR8721PbFIRLU8721PbF
irlr8721.pdf

isc N-Channel MOSFET Transistor IRLR8721, IIRLR8721FEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
irlr8721pbf-1.pdf

IRLR8721PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.4 m(@V = 10V)GSSGQg (typical) 8.5 nCGID 65 A D-PakS(@T = 25C)CIRLR8721PbF-1Features BenefitsIndustry-standard pinout D-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu
irlu8726pbf irlr8726pbf.pdf

PD - 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I
Otros transistores... IRLR7821 , IRLR7821C , IRLR7833 , IRLR7843 , IRLR8103V , IRLR8113 , IRLR8256 , IRLR8259 , 18N50 , IRLR8726 , IRLR8729 , IRLR8743 , IRLS3034 , IRLS3034-7P , IRLS3036 , IRLS3036-7P , IRLS4030 .
History: IPP80N06S4L-05 | SSS2N60B | WMK07N70C4 | SI8205A | FDMS86500DC | SE01P13K | CS55N25A8R-G
History: IPP80N06S4L-05 | SSS2N60B | WMK07N70C4 | SI8205A | FDMS86500DC | SE01P13K | CS55N25A8R-G



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