IRLR8726 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR8726
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 86 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.35 V
Carga de la puerta (Qg): 15 nC
Tiempo de subida (tr): 49 nS
Conductancia de drenaje-sustrato (Cd): 480 pF
Resistencia entre drenaje y fuente RDS(on): 0.0058 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET IRLR8726
IRLR8726 Datasheet (PDF)
irlu8726pbf irlr8726pbf.pdf
PD - 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I
irlr8726pbf irlu8726pbf.pdf
PD - 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I
irlr8726.pdf
isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726FEATURESStatic drain-source on-resistance:RDS(on)5.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
irlu8721pbf irlr8721pbf.pdf
IRLR8721PbFIRLU8721PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 8.4m 8.5nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial Usel Lead-FreeS SDG GBenefitsD-Pakl Very Low RDS(on) at 4.5V VGS I-PakIRLR8721PbFIRLU8721PbF
irlr8721pbf-1.pdf
IRLR8721PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.4 m(@V = 10V)GSSGQg (typical) 8.5 nCGID 65 A D-PakS(@T = 25C)CIRLR8721PbF-1Features BenefitsIndustry-standard pinout D-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu
irlu8729pbf irlr8729pbf.pdf
PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C
irlr8729pbf-1.pdf
IRLR8729PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.9 m(@V = 10V)GSSQg (typical) 10 nCGGID 58 AD-PakS(@T = 25C)CIRLR8729PbF-1Features BenefitsIndustry-standard pinout D-Pak and I-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier
irlr8729pbf irlu8729pbf.pdf
PD - 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C
irlr8729tr.pdf
IRLR8729TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO
irlr8729.pdf
isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729FEATURESStatic drain-source on-resistance:RDS(on)8.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFully characterized avalanche voltage and currentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai
irlr8721.pdf
isc N-Channel MOSFET Transistor IRLR8721, IIRLR8721FEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
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