IRLU024Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95773BIRLR024ZPbFIRLU024ZPbFHEXFET Power MOSFETFeaturesn Logic LevelDn Advanced Process TechnologyVDSS = 55Vn Ultra Low On-Resistancen 175C Operating TemperatureRDS(on) = 58mn Fast SwitchingGn Repetitive Avalanche Allowed up to Tjmaxn Lead-Free ID = 16ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ext

PD - 97753AUTOMOTIVE GRADEAUIRLR024ZAUIRLU024ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process Technology DV(BR)DSS55V Ultra Low On-ResistanceRDS(on) typ.46m 175C Operating TemperatureG Fast Switching max. 58m Repetitive Avalanche Allowed up to TjmaxSID16A Lead-Free, RoHS Compliant Automotive Qualified *DD

AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De

PD- 91363EIRLR024NIRLU024NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.065G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve the lowes

IRLR/U024AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.061 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ra

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

PD- 95081AIRLR024NPbFIRLU024NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Surface Mount (IRLR024N) VDSS = 55Vl Straight Lead (IRLU024N)l Advanced Process TechnologyRDS(on) = 0.065Gl Fast Switchingl Fully Avalanche RatedID = 17ASl Lead-FreeDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techni

PD- 96091IRLR024PbFIRLU024PbFHEXFET Power MOSFET Lead-FreeDescriptionAbsolute Maximum Ratings08/01/06Document Number: 91322 www.vishay.com1IRLR/U024PbFDocument Number: 91322 www.vishay.com2IRLR/U024PbFDocument Number: 91322 www.vishay.com3IRLR/U024PbFDocument Number: 91322 www.vishay.com4IRLR/U024PbFDocument Number: 91322 www.vishay.com5IRLR

IRLR024, IRLU024, SiHLR024, SiHLU024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR024/SiHLR024)RDS(on) ()VGS = 5.0 V 0.10RoHS* Straight Lead (IRLU024/SiHLU024)Qg (Max.) (nC) 18COMPLIANT Available in Tape and ReelQgs (nC) 4.5Qgd (nC) 12 Logic-Level Gate DriveConfiguration Single

IRLU024NPBFwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secon

isc N-Channel MOSFET Transistor IRLU024NFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN