IRLU2908 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU2908
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 95 nS
Cossⓘ - Capacitancia de salida: 260 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Encapsulados: IPAK
Búsqueda de reemplazo de IRLU2908 MOSFET
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IRLU2908 datasheet
irlr2908pbf irlu2908pbf.pdf
PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 80V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve
irlu2908.pdf
isc N-Channel MOSFET Transistor IRLU2908 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irlr2905pbf irlu2905pbf.pdf
PD- 95084A IRLR/U2905PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027 l Fast Switching G l Fully Avalanche Rated ID = 42A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t
irlu2905zpbf irlr2905zpbf.pdf
PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem
Otros transistores... IRLS4030 , IRLS4030-7P , IRLSL3034 , IRLSL3036 , IRLSL4030 , IRLTS6342 , IRLU024Z , IRLU2905Z , 2N60 , IRLU3105 , IRLU3110Z , IRLU3114Z , IRLU3636 , IRLU3705Z , IRLU3714Z , IRLU3715Z , IRLU3717 .
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