IRLU3636 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU3636
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 143 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua
de drenaje: 99 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 216 nS
Cossⓘ - Capacitancia de salida: 332 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
Encapsulados: IPAK
Búsqueda de reemplazo de IRLU3636 MOSFET
- Selecciónⓘ de transistores por parámetros
IRLU3636 datasheet
..1. Size:383K international rectifier
irlr3636pbf irlu3636pbf.pdf 
PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level
..2. Size:383K international rectifier
irlu3636pbf irlr3636pbf.pdf
PD - 96224 IRLR3636PbF IRLU3636PbF Applications l DC Motor Drive HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 60V l High Speed Power Switching RDS(on) typ. 5.4m l Hard Switched and High Frequency Circuits max. 6.8m G ID (Silicon Limited) 99A Benefits ID (Package Limited) 50A S l Optimized for Logic Level
..3. Size:261K inchange semiconductor
irlu3636.pdf
isc N-Channel MOSFET Transistor IRLU3636 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.1. Size:286K international rectifier
irlu3103pbf irlr3103pbf.pdf
PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing
9.2. Size:297K international rectifier
irlr3715zcpbf irlu3715zcpbf.pdf
PD - 96053 IRLR3715ZCPbF IRLU3715ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage D-Pa
9.3. Size:115K international rectifier
irlr3714 irlu3714.pdf
PD - 94266 IRLR3714 SMPS MOSFET IRLU3714 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag
9.4. Size:266K international rectifier
irlr3717pbf irlu3717pbf.pdf
PD - 95776A IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l
9.5. Size:322K international rectifier
irlr3105pbf irlu3105pbf.pdf
PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature Fast Switching RDS(on) = 0.037 G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 25A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie
9.6. Size:271K international rectifier
irlu3715pbf irlr3715pbf.pdf
PD - 95555A SMPS MOSFET IRLR3715PbF IRLU3715PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak
9.7. Size:286K international rectifier
irlr3103pbf irlu3103pbf.pdf
PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing
9.8. Size:285K international rectifier
irlr3410pbf irlu3410pbf.pdf
PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
9.9. Size:317K international rectifier
irlr3110zpbf irlu3110zpbf.pdf
PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to
9.10. Size:222K international rectifier
irlu3714pbf irlr3714pbf.pdf
PD - 95554A IRLR3714PbF SMPS MOSFET IRLU3714PbF HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-Pak
9.11. Size:310K international rectifier
irlu3303pbf irlr3303pbf.pdf
PD- 95086A IRLR/U3303PbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Ultra Low On-Resistance VDSS = 30V l Surface Mount (IRLR3303) l Straight Lead (IRLU3303) RDS(on) = 0.031 l Advanced Process Technology G l Fast Switching l Fully Avalanche Rated ID = 35A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t
9.12. Size:281K international rectifier
irlr3802pbf irlu3802pbf.pdf
PD - 95089A IRLR3802PbF IRLU3802PbF HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Point- VDSS RDS(on) max Qg of-Load Synchronous Buck Converters 12V 8.5m 27nC l Power Management for Netcom, Computing and Portable Applications. l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current D-Pak I-
9.13. Size:315K international rectifier
irlu3114zpbf irlr3114zpbf.pdf
PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance
9.14. Size:315K international rectifier
irlr3114zpbf irlu3114zpbf.pdf
PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic Level G RDS(on) = 4.9m Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance
9.15. Size:266K international rectifier
irlu3717pbf irlr3717pbf.pdf
PD - 95776A IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l
9.16. Size:340K international rectifier
irlr3705zpbf irlu3705zpbf.pdf
PD - 95956A IRLR3705ZPbF IRLU3705ZPbF Features Logic Level Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel
9.17. Size:317K international rectifier
irlu3110zpbf irlr3110zpbf.pdf
PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature Fast Switching VDSS = 100V Repetitive Avalanche Allowed up to Tjmax G RDS(on) = 14m Description Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to
9.18. Size:324K international rectifier
irlu3715zpbf irlr3715zpbf.pdf
PD - 95088A IRLR3715ZPbF IRLU3715ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits D-Pak I-Pak l Ultra-Low Gate Impedance IRLR3715Z IRLU3715Z l Fully Cha
9.19. Size:285K international rectifier
irlu3410pbf irlr3410pbf.pdf
PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
9.20. Size:322K international rectifier
irlr3915pbf irlu3915pbf.pdf
PD - 95090B IRLR3915PbF IRLU3915PbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 14m Lead-Free G Description ID = 30A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista
9.21. Size:262K international rectifier
irlu3714zpbf irlr3714zpbf.pdf
PD - 95775A IRLR3714ZPbF IRLU3714ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 20V 15m 4.7nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l
9.22. Size:125K international rectifier
irlr3715 irlu3715.pdf
PD - 94177 SMPS MOSFET IRLR3715 IRLU3715 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage
9.23. Size:714K infineon
auirlr3110z auirlu3110z.pdf
AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea
9.24. Size:706K infineon
auirlr3114z auirlu3114z.pdf
AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L
9.25. Size:2237K cn vbsemi
irlu3103p.pdf
IRLU3103P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Gen III Power MOSFET 0.07 at VGS = 10 V 53 100 % Rg Tested RoHS 30 19 nC COMPLIANT 100 % UIS Tested 0.09 at VGS = 4.5 V 48 APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S To
9.26. Size:1462K cn vbsemi
irlu3410p.pdf
IRLU3410P www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
9.27. Size:260K inchange semiconductor
irlu3717.pdf
isc N-Channel MOSFET Transistor IRLU3717 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.28. Size:261K inchange semiconductor
irlu3705z.pdf
isc N-Channel MOSFET Transistor IRLU3705Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.29. Size:260K inchange semiconductor
irlu3915.pdf
isc N-Channel MOSFET Transistor IRLU3915 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.30. Size:261K inchange semiconductor
irlu3802.pdf
isc N-Channel MOSFET Transistor IRLU3802 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.31. Size:261K inchange semiconductor
irlu3110z.pdf
isc N-Channel MOSFET Transistor IRLU3110Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.32. Size:260K inchange semiconductor
irlu3105.pdf
isc N-Channel MOSFET Transistor IRLU3105 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.33. Size:261K inchange semiconductor
irlu3410.pdf
isc N-Channel MOSFET Transistor IRLU3410 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.34. Size:261K inchange semiconductor
irlu3114z.pdf
isc N-Channel MOSFET Transistor IRLU3114Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.35. Size:261K inchange semiconductor
irlu3303.pdf
isc N-Channel MOSFET Transistor IRLU3303 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.36. Size:261K inchange semiconductor
irlu3715z.pdf
isc N-Channel MOSFET Transistor IRLU3715Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.37. Size:261K inchange semiconductor
irlu3103.pdf
isc N-Channel MOSFET Transistor IRLU3103 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
Otros transistores... IRLSL4030
, IRLTS6342
, IRLU024Z
, IRLU2905Z
, IRLU2908
, IRLU3105
, IRLU3110Z
, IRLU3114Z
, AO3400A
, IRLU3705Z
, IRLU3714Z
, IRLU3715Z
, IRLU3717
, IRLU3802
, IRLU3915
, IRLU7807Z
, IRLU7821
.
