IRLU7821 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLU7821
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1(min) V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: IPAK

Búsqueda de reemplazo de MOSFET IRLU7821

IRLU7821 Datasheet (PDF)

..1. Size:320K international rectifier
irlr7821pbf irlu7821pbf.pdf

PD - 95091BIRLR7821PbFIRLU7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 10m 10nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSD-PakI-Pakl Ultra-Low Gate Impedance IRL

..2. Size:320K infineon
irlr7821pbf irlu7821pbf.pdf

..3. Size:260K inchange semiconductor
irlu7821.pdf

isc N-Channel MOSFET Transistor IRLU7821FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

0.1. Size:322K international rectifier
irlr7821cpbf irlu7821cpbf.pdf

PD - 96056IRLR7821CPbFIRLU7821CPbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 10m 10nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl

8.1. Size:319K international rectifier
irlr7833pbf irlu7833pbf.pdf

PD - 95092CIRLR7833PbFIRLU7833PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 4.5m 33nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSD-Pak I-Pakl Ultra-Low Gate ImpedanceIR

8.2. Size:363K international rectifier
irlr7843cpbf irlu7843cpbf.pdf

PD - 96058AIRLR7843CPbFIRLU7843CPbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 3.3m 34nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance D-PakI-Pak

8.3. Size:365K international rectifier
irlr7843pbf irlu7843pbf.pdf

PD - 95440BIRLR7843PbFIRLU7843PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.3m 34nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl

8.4. Size:298K international rectifier
irlr7807zcpbf irlu7807zcpbf.pdf

PD - 96055IRLR7807ZCPbFIRLU7807ZCPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ)Converters for Computer Processor Powerl Lead-Free30V 13.8m 7.0nCBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD-Pak I-PakIRLR7807ZCPbF IRLU7807ZCPbFAbsolute Maximum Ra

8.5. Size:268K international rectifier
irlr7807zpbf irlu7807zpbf.pdf

PD - 95777AIRLR7807ZPbFIRLU7807ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQg (typ.)Converters for Computer Processor Powerl Lead-Free30V 13.8m 7.0nCBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD-Pak I-PakIRLR7807Z IRLU7807ZAbsolute Maximum Ratings

8.6. Size:319K infineon
irlr7833pbf irlu7833pbf.pdf

8.7. Size:371K infineon
irlr7843pbf irlu7843pbf.pdf

8.8. Size:260K inchange semiconductor
irlu7833.pdf

isc N-Channel MOSFET Transistor IRLU7833FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

8.9. Size:261K inchange semiconductor
irlu7843.pdf

isc N-Channel MOSFET Transistor IRLU7843FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

8.10. Size:261K inchange semiconductor
irlu7807z.pdf

isc N-Channel MOSFET Transistor IRLU7807ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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