IRLU8256 Todos los transistores

 

IRLU8256 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLU8256
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 63 W
   Voltaje máximo drenador - fuente |Vds|: 25 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 81 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.35 V
   Carga de la puerta (Qg): 10 nC
   Tiempo de subida (tr): 46 nS
   Conductancia de drenaje-sustrato (Cd): 453 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0057 Ohm
   Paquete / Cubierta: IPAK

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IRLU8256 Datasheet (PDF)

 ..1. Size:284K  international rectifier
irlu8256pbf irlr8256pbf.pdf

IRLU8256
IRLU8256

PD - 96208AIRLR8256PbFIRLU8256PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsl Very Low RDS(on) at 4.5V VGSS Sl Ultra-Low Gate ImpedanceDG Gl Fully Char

 ..2. Size:261K  inchange semiconductor
irlu8256.pdf

IRLU8256
IRLU8256

isc N-Channel MOSFET Transistor IRLU8256FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 7.1. Size:363K  international rectifier
irlu8259pbf irlr8259pbf.pdf

IRLU8256
IRLU8256

PD - 97360IRLR8259PbFIRLU8259PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully

 7.2. Size:361K  infineon
irlr8259pbf irlu8259pbf.pdf

IRLU8256
IRLU8256

PD - 97360IRLR8259PbFIRLU8259PbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial UseDBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully

 7.3. Size:261K  inchange semiconductor
irlu8259.pdf

IRLU8256
IRLU8256

isc N-Channel MOSFET Transistor IRLU8259FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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