AUIRF1010EZS Todos los transistores

 

AUIRF1010EZS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRF1010EZS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 84 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO263
 
   - Selección ⓘ de transistores por parámetros

 

AUIRF1010EZS Datasheet (PDF)

 ..1. Size:756K  infineon
 auirf1010ez auirf1010ezs auirf1010ezl.pdf pdf_icon

AUIRF1010EZS

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q

 0.1. Size:375K  international rectifier
 auirf1010ezstrl.pdf pdf_icon

AUIRF1010EZS

PD - 95962AUTOMOTIVE GRADEAUIRF1010EZAUIRF1010EZSAUIRF1010EZLFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS60V 175C Operating Temperature Fast Switching RDS(on) max.8.5m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited)84A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)

 5.1. Size:268K  international rectifier
 auirf1010zstrl.pdf pdf_icon

AUIRF1010EZS

PD - 97458AAUIRF1010ZAUTOMOTIVE GRADEAUIRF1010ZSAUIRF1010ZLFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.7.5mTjmaxG Lead-Free, RoHS CompliantID (Silicon Limited)94A Automotive Qualified *S

 5.2. Size:752K  infineon
 auirf1010z auirf1010zs auirf1010zl.pdf pdf_icon

AUIRF1010EZS

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive

MOSTRAR MÁS

Otros transistores... IRLU8729 , IRLU8743 , IRLZ44Z , IRLZ44ZL , IRLZ44ZS , SI4420DY , AUIRF1010EZ , AUIRF1010EZL , IRF740 , AUIRF1010Z , AUIRF1010ZL , AUIRF1010ZS , AUIRF1018E , AUIRF1018ES , AUIRF1324 , AUIRF1324S , AUIRF1324S-7P .

History: JST2301H | SQ2319ADS

 

 
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