AUIRF1010EZS Todos los transistores

 

AUIRF1010EZS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AUIRF1010EZS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 84 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 58 nC

Resistencia drenaje-fuente RDS(on): 0.0085 Ohm

Empaquetado / Estuche: D2PAK

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AUIRF1010EZS Datasheet (PDF)

1.1. auirf1010ezstrl.pdf Size:375K _update-mosfet

AUIRF1010EZS
AUIRF1010EZS

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175°C Operating Temperature Fast Switching RDS(on) max. 8.5mΩ Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)

1.2. auirf1010zstrl.pdf Size:268K _update-mosfet

AUIRF1010EZS
AUIRF1010EZS

PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance D ● 175°C Operating Temperature V(BR)DSS 55V ● Fast Switching ● Repetitive Avalanche Allowed up to RDS(on) max. 7.5m  Tjmax G ● Lead-Free, RoHS Compliant ID (Silicon Limited) 94A ● Automotive Qualified * S

 4.1. auirf1405zs-7p.pdf Size:247K _update-mosfet

AUIRF1010EZS
AUIRF1010EZS

AUTOMOTIVE GRADE AUIRF1405ZS-7P Features HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A l Automotive Qualified * S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the la

4.2. auirf1404zstrl.pdf Size:362K _update-mosfet

AUIRF1010EZS
AUIRF1010EZS

PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features Advanced Process Technology HEXFET® Power MOSFET Low On-Resistance D V(BR)DSS 40V 175°C Operating Temperature Fast Switching RDS(on) max. 3.7m Ω Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified * S ID (Package Limited) 160A

 4.3. auirf1405zstrl.pdf Size:313K _update-mosfet

AUIRF1010EZS
AUIRF1010EZS

PD - 97486A AUIRF1405ZS AUTOMOTIVE GRADE AUIRF1405ZL Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D V(BR)DSS 55V l 175°C Operating Temperature l Fast Switching RDS(on) max. 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax S ID 150A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specifically designed for

4.4. auirf1324strl.pdf Size:472K _update-mosfet

AUIRF1010EZS
AUIRF1010EZS

PD - 97483 AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET® Power MOSFET Features Advanced Process Technology D VDSS 24V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 1.3mΩ 175°C Operating Temperature G ID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant S Automotive Qua

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